ZXT953KTC Allicdata Electronics

ZXT953KTC Discrete Semiconductor Products

Allicdata Part #:

ZXT953KTR-ND

Manufacturer Part#:

ZXT953KTC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 100V 5A D-PAK
More Detail: Bipolar (BJT) Transistor PNP 100V 5A 125MHz 4.2W S...
DataSheet: ZXT953KTC datasheetZXT953KTC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 4.2W
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3
Base Part Number: ZXT953
Description

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A ZXT953KTC transistor is a bipolar junction transistor (BJT) specifically designed to be used in high frequency switch applications.The device consists of three terminals – the base, the collector and the emitter – and has the potential to move the current from the collector to the emitter when the base current is applied. A ZXT953KTC transistor has a relatively low base-to collector current ratio and hence is best used in low-gain applications such as switching circuits where it is employed to turn power devices either on or off.

The ZXT953KTC features wide bandwidth ensuring that it can deliver up to 100MHz of gain and up to 1A of current. The device also guarantees an impressive reliability, with an operating temperature range of -55°C to +125°C, superior thermal budget and very low leakage current.

Because of its relatively low voltage drop, the ZXT953KTC is typically used in low power applications, typically those that operate on voltages of 5V or less. This type of transistor is, therefore, ideal for use in a variety of applications such as LED lighting, LED drivers, general purpose logic, and audio applications.

The ZXT953KTC transistor operates by having a small amount of currents entering the base of the transistor. This current changes the conductivity of the junction between the collector and the base. A relatively small base current will result in a large collector current. This, in turn, results in a large collector-emitter current.

The ZXT953KTC features an NPN structure, which refers to its main physical structure of the BJT. The NPN structure of the ZXT953KTC is created by making use of different forms of semiconductor material. The base-emitter junction contains p-type material, while the collector-base junction is made of n-type material. The n-type material is usually doped with an impurity, most often an element like arsenic.

The PN junction between the collector and base serve as the transistor\'s switching elements, while the base-emitter junction serves as the input control to the switching element. When a base current is applied, it causes the collector-base junction to change conductivity. This results in a larger collector-emitter flow.

The ZXT953KTC transistor is typically used in single transistor applications, where only one transistor is used to complete a circuit function. Examples of these single transistor applications include logic gates, radio frequency amplifiers, audio amplifiers and high frequency switching circuits. Furthermore, the ZXT953KTC’s wide bandwidth and high current capability lends it well to applications where fast switching or high current is required.

The specific data is subject to PDF, and the above content is for reference

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