ZXTC2045E6QTA Allicdata Electronics
Allicdata Part #:

ZXTC2045E6QTA-ND

Manufacturer Part#:

ZXTC2045E6QTA

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN/PNP 30V 1.5A
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 30V 1.5A 2...
DataSheet: ZXTC2045E6QTA datasheetZXTC2045E6QTA Datasheet/PDF
Quantity: 1000
3000 +: $ 0.19464
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 375mV @ 15mA, 750mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Power - Max: 700mW
Frequency - Transition: 265MHz, 195MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26
Description

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The ZXTC2045E6QTA is part of the ZXTC BiCMOS family of devices, and is an array of NPN transistors optimized for high voltage and low current operation. This device is designed primarily for applications where a low power solution is desired, and is especially suitable for high frequency power management and lighting control. The ZXTC2045E6QTA has a very low on-state leakage current, making it suitable for energy efficient applications.

The ZXTC2045E6QTA is composed of four NPN transistors, connected in an array. The array is composed of four symmetrically spaced vertical NPN transistors, with each transistor having separate base, collector and emitter terminals. The device is manufactured in an industry-standard small, leadless package and is therefore ideal for applications where PCB real estate is limited. The ZXTC2045E6QTA has a maximum operating temperature of +100°C and can function in temperatures down to -40°C.

The ZXTC2045E6QTA is an excellent choice for applications requiring a high level of protection against overloads and power-related shorts, due to its very low on-state leakage current and its ability to be paralleled with other transistors to provide higher gain. The device also features a variety of protection features such as thermal shutoff, under-voltage lockout, and over-voltage protection.

The ZXTC2045E6QTA has an impressive specification and can be used in a wide variety of applications including telecommunications, consumer electronics, automotive, medical and industrial. As the device contains multiple transistors, it is suitable for applications requiring more than one transistor. Examples include audio amplifiers, RF power amplifiers, power control circuits, switching regulators, and DC-DC converters. The device also finds use in high voltage applications such as motor control and lighting applications due to its low on-state leakage current.

The ZXTC2045E6QTA\'s working principle is straightforward. When the base terminal is provided with a positive voltage relative to the emitter, current flows from the emitter to the collector. This increases the current flow in the circuit, triggering the other transistors in the array. This then allows the control of the voltage in the circuit, giving the device the ability to control a wide variety of circuits such as DC-DC converters and power control circuits.

The ZXTC2045E6QTA is a high-performance device, offering an impressive performance to price ratio. Its low on-state leakage current and wide range of protection options make it an ideal choice for power management and lighting control applications. Its small leadless package and wide temperature range makes it suitable for a variety of applications in the telecommunications, consumer electronics, automotive, medical, and industrial sectors.

The specific data is subject to PDF, and the above content is for reference

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