Allicdata Part #: | ZXTC6718MCQTA-ND |
Manufacturer Part#: |
ZXTC6718MCQTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | PWR LOW SAT TRANSISTOR U-DFN3020 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 20V 100MH... |
DataSheet: | ZXTC6718MCQTA Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 125mA, 4.5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 200mA, 2V |
Power - Max: | 1.5W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN Exposed Pad |
Supplier Device Package: | W-DFN3020-8 |
Description
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The ZXTC6718MCQTA Transistor Array
The ZXTC6718MCQTA is an integrated circuit consisting of an array of 16 NPN transistors and two PNP transistors. It is typically used in analog and digital circuits where a voltage gain needs to be augmented, such as trans-impedance amplifiers, audio amplifiers, and power amplifiers.Features
The ZXTC6718MCQTA offers several performance benefits compared to standard discrete transistors. Firstly, it is much smaller in size relative to the overall circuitry, typically reducing the size of a circuit by as much as 40%. Additionally, it reduces parasitic capacitances and impedances, resulting in improved signal isolation between transistors, and therefore a higher voltage gain. The ZXTC6718MCQTA also has a wide range of operating conditions and associated performance characteristics. It supports a wide supply voltage range, from 5V to 18V, and an operating temperature range of -40 to 125 degrees Celsius. It has a low input bias current and low base resistance to ensure high accuracy and repeatability over temperature and supply voltage. The output power and voltage gain are adjustable by adjusting the emitter current of each transistor, making it ideal for applications where the desired voltage gain may change during operation.Application Areas
The ZXTC6718MCQTA is used in a wide range of applications, from analog and digital circuits, to power amplifiers and trans-impedance amplifiers. It can be used in audio equipment, including speakers and headphones, as well as repair and test equipment to improve signal fidelity and voltage gain accuracy. It is also used in automotive systems to control relay coils, as well as lighting, motor, and solenoid control systems. In medical and robotic applications, the low switching speed of the ZXTC6718MCQTA reduces the power consumption associated with faster switching transistors, allowing for smaller and more efficient systems.Working Principle
The ZXTC6718MCQTA is a monolithic multiple-NPN array, meaning that each device is constructed from a single piece of silicon. Each of the 16 NPN transistors is connected in series with a PNP transistor, forming a common-emitter amplifier with adjustable emitter current for each NPN transistor.The transistor array is designed for low voltage gain applications, and offers high accuracy and repeatability over a wide range of operating conditions. In simplified terms, when a current is supplied to the base of an NPN transistor in the array, the voltage at its emitter is increased, resulting in a voltage gain. The PNP transistor then acts as an emitter follower to adjust the voltage gain of the system to the desired level.Conclusion
The ZXTC6718MCQTA is a small integrated circuit consisting of an array of NPN transistors and two PNP transistors, typically used in analog and digital circuits where a voltage gain needs to be augmented. It has a wide range of operating conditions and associated performance characteristics, making it ideal for a wide variety of applications. By supplying a current to the base of each NPN transistor, the voltage gain can be adjusted to the desired level, resulting in improved signal isolation between the transistors, and higher voltage gain.The specific data is subject to PDF, and the above content is for reference
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