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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRL7833SPBF-ND	IRL7833SPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 15V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRF7832ZTR-ND	IRF7832ZTR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.35V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRF7353D2PBF-ND	IRF7353D2PBF	Infineon Technologies	View more Series: FETKY Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRF8113PBF-ND	IRF8113PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
BA892H6127XTSA1 TR-ND	BA892H6127XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Standard - Single Voltage - Peak Reverse (Max): 35V Current - Max: 100mA Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500 mOhm @ 10mA, 100MHz Operating Temperature: 150C (TJ) Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Base Part Number: BA892	1000 Order	1+: $0
IRGP4086PBF-ND	IRGP4086PBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 70A Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A Power - Max: 160W Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25C: 36ns/112ns Test Condition: 196V, 25A, 10 Ohm Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	--
SPD18P06PINTR-N D	SPD18P06P	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 18.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Power Dissipation (Max): 80W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFP4228PBF-ND	IRFP4228PBF	Infineon Technologies	View more Series: HEXFET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Power Dissipation (Max): 310W (Tc) Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	1000 Order	--
BAT6402VH6327XT SA1TR-ND	BAT6402VH6327XT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2A @ 30V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.047 6000+: $0.0423 15000+: $0.0376 30000+: $0.0352 75000+: $0.0313
IRFS23N20DTRRP- ND	IRFS23N20DTRRP	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRLR2703TRLPBF- ND	IRLR2703TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFR15N20DTRLP- ND	IRFR15N20DTRLP	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Power Dissipation (Max): 3W (Ta), 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRF7707GTRPBFTR -ND	IRF7707GTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2361pF @ 15V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	1000 Order	1+: $0
IPB06CN10NG-ND	IPB06CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 180A Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V Power Dissipation (Max): 214W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPB50CN10NGATMA 1TR-ND	IPB50CN10NGATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 20A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 50V Power Dissipation (Max): 44W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPI80N04S304AKS A1-ND	IPI80N04S304AKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 90A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRF3710ZGPBF-ND	IRF3710ZGPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 250mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Power Dissipation (Max): 160W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
TD162N16KOFHPSA 1-ND	TD162N16KOFHPSA 1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Series Connection - SCR/Diode Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 162A Current - On State (It (RMS)) (Max): 260A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	8+: $75.9871
TD162N16KOFAHPS A1-ND	TD162N16KOFAHPS A1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Series Connection - SCR/Diode Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 162A Current - On State (It (RMS)) (Max): 260A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	8+: $80.1017
T2810N22TOFVTXP SA1-ND	T2810N22TOFVTXP SA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 2.2kV Current - On State (It (AV)) (Max): 2810A Current - On State (It (RMS)) (Max): 5800A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 300mA Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AE	1000 Order	1+: $372.532
BAT5404WH6327XT SA1TR-ND	BAT5404WH6327XT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2A @ 25V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	1000 Order	30000+: $0.0321
T2001N34TOFXPSA 1-ND	T2001N34TOFXPSA 1	Infineon Technologies	View more Part Status: Obsolete Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 3600V Current - On State (It (AV)) (Max): 1900A Current - On State (It (RMS)) (Max): 29900A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 350mA Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Current - Hold (Ih) (Max): 350mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AE	1000 Order	1+: $0
1EDI40I12AFXUMA 1TR-ND	1EDI40I12AFXUMA 1	Infineon Technologies	View more Series: EiceDriver Packaging: Tape & Reel (TR) Part Status: Active Technology: Magnetic Coupling Number of Channels: 1 Rise / Fall Time (Typ): 10ns, 9ns Voltage - Supply: 13 V ~ 35 V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8-51	1000 Order	2500+: $0.5765 5000+: $0.5694
IR4312MTRPBFTR- ND	IR4312MTRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Type: Class D Output Type: 2-Channel (Stereo) Max Output Power x Channels @ Load: 35W x 2 @ 4 Ohm Voltage - Supply: 10 V ~ 15 V Features: Depop, Differential Inputs Mounting Type: Surface Mount Operating Temperature: -40C ~ 100C (TA) Supplier Device Package: 44-PQFN (7x7) Package / Case: 44-PowerVFQFN Base Part Number: IR4312	1000 Order	--
XMC1301T038F000 8AAXUMA1-ND	XMC1301T038F000 8AAXUMA1	Infineon Technologies	View more Series: XMC1000 Packaging: Tape & Reel (TR) Part Status: Obsolete Core Processor: ARM Cortex-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: IC, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, IS, POR, PWM, WDT Number of I/O: 26 Program Memory Size: 8KB (8K x 8) Program Memory Type: FLASH RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 16x12b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Supplier Device Package: 38-TSSOP	1000 Order	--
XMC4104Q48K128A BXUMA1-ND	XMC4104Q48K128A BXUMA1	Infineon Technologies	View more Series: XMC4000 Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Core Processor: ARM Cortex-M4 Core Size: 32-Bit Speed: 80MHz Connectivity: CANbus, IC, LINbus, SPI, UART/USART, USB Peripherals: DMA, IS, LED, POR, PWM, WDT Number of I/O: 21 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH RAM Size: 20K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 9x12b; D/A 2x12b Oscillator Type: Internal Operating Temperature: -40C ~ 125C (TA) Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-53	1000 Order	1+: $0
XC2764X40F66LAA KXUMA1-ND	XC2764X40F66LAA KXUMA1	Infineon Technologies	View more Series: XC27x4X Part Status: Obsolete Core Processor: C166SV2 Core Size: 16/32-Bit Speed: 66MHz Connectivity: CANbus, EBI/EMI, IC, LINbus, SPI, SSC, UART/USART, USI Peripherals: IS, POR, PWM, WDT Number of I/O: 76 Program Memory Size: 320KB (320K x 8) Program Memory Type: FLASH RAM Size: 34K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40C ~ 125C (TA)	1000 Order	1+: $0
XC2336A56F80LAA HXUMA1-ND	XC2336A56F80LAA HXUMA1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IRF6702M2DTR1PB F-ND	IRF6702M2DTR1PB F	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 15A Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Power - Max: 2.7W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET Isometric MA Supplier Device Package: DIRECTFET MA	1000 Order	1+: $0
IRFR15N20DPBF-N D	IRFR15N20DPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Power Dissipation (Max): 3W (Ta), 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1796 Order	1+: $1.2411 10+: $1.1183 100+: $0.8987 500+: $0.699 1000+: $0.5792
IRFS3107PBF-ND	IRFS3107PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 140A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9370pF @ 50V Power Dissipation (Max): 370W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	2000 Order	--
IRLR7807ZPBFTR- ND	IRLR7807ZTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2000 Order	2000+: $0.2586
IPDH6N03LAGINTR -ND	IPDH6N03LAG	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 30A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 15V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IPP80R450P7XKSA 1-ND	IPP80R450P7XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 220A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 500V FET Feature: Super Junction Power Dissipation (Max): 73W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	225 Order	--
IRGR3B60KD2TRRP -ND	IRGR3B60KD2TRRP	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 7.8A Current - Collector Pulsed (Icm): 15.6A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A Power - Max: 52W Switching Energy: 62J (on), 39J (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25C: 18ns/110ns Test Condition: 400V, 3A, 100 Ohm, 15V Reverse Recovery Time (trr): 77ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Base Part Number: IRGR3B60KD2PBF	1000 Order	--
ESD231B1W0201E6 327XTSA1TR-ND	ESD231B1W0201E6 327XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5.5V (Max) Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Current - Peak Pulse (10/1000s): 9A (8/20s) Power - Peak Pulse: 132W Power Line Protection: No Applications: HDMI Capacitance @ Frequency: 3.5pF @ 1MHz Operating Temperature: -55C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: WLL-2-1	30000 Order	15000+: $0.0202 30000+: $0.0191 75000+: $0.0179 105000+: $0.0159
ESD203B102ELE63 27XTMA1TR-ND	ESD203B102ELE63 27XTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 13.2V (Max) Voltage - Breakdown (Min): 13.7V Voltage - Clamping (Max) @ Ipp: 23V Current - Peak Pulse (10/1000s): 5A (8/20s) Power - Peak Pulse: 115W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Operating Temperature: -55C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: TSLP-2-20	1000 Order	--
TLE4955HALA1-ND	TLE4955HALA1	Infineon Technologies	View more Series: * Part Status: Discontinued at Digi-Key	1000 Order	2000+: $1.3558
TLE4998S8DXUMA1 -ND	TLE4998S8DXUMA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	2500+: $2.2287
TLE49452WAFERX6 SA1-ND	TLE49452WAFERX6 SA1	Infineon Technologies	View more Part Status: Last Time Buy	1000 Order	1+: $0

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