Allicdata Part #: | SPD18P06PINTR-ND |
Manufacturer Part#: |
SPD18P06P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 18.6A TO-252 |
More Detail: | P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG... |
DataSheet: | SPD18P06P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 13.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18.6A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Field-effect transistors (FETs) are semiconductor devices used in amplifiers and digital circuits. They offer very low power consumption and can handle much larger currents than their Bipolar Junction Transistor (BJT) counterparts. The SPD18P06P transistor is a Surface Mounted Device (SMD) FET which is designed for use in a wide range of applications.
The SPD18P06P is a single N-Channel Enhancement Mode MOSFET which makes it ideal for use in high voltage switching applications or wherever low RDS(on) is desired. The transistor features a drain current rating of 18A and peak drain current of 42A, with a maximum drain-source voltage of 50V. It has a fast switching speed of 5nC, meaning it can be used in high-speed switching applications. The SPD18P06P has a low 2.35mohm RDS(on) at 10V and it is rated for a temperature range of -55C to 175C.
The SPD18P06P is a versatile device and can be used in a wide range of applications. It is commonly used for power supply protection and conversion, motor control, power output stages for switching regulators, DC-DC converters, and load switching. It is also used for inverters, converters, and induction motors. In addition, it can be used in automotive and industrial applications.
The working principle of the SPD18P06P transistor is based on the MOSFET. MOSFET stands for Metal Oxide Semiconductor Field-Effect Transistor. It is a type of FET that uses a metal-oxide film as a gate electrode. This gate electrode controls the flow of current through the device, allowing the current to be switched on or off as desired. The SPD18P06P utilizes an N-channel MOSFET, which means that the transistor is activated by an applied positive voltage to the gate terminal. As the positive voltage is increased, the current through the device increases, which allows the voltage across the device to drop, switching it on and off.
In conclusion, the SPD18P06P is a versatile, single N-Channel MOSFET with low power consumption and high current handling capability. It is widely used for load switching, motor control, and inverters and it operates on the principle of a metal oxide semiconductor FET. The SPD18P06P has a drain current rating of 18A and peak drain current of 42A, with a maximum drain-source voltage of 50V. It has a fast switching speed of 5nC and is rated for a temperature range of -55C to 175C.
The specific data is subject to PDF, and the above content is for reference
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