IPP80R450P7XKSA1

Vgs(th) (Max) @ Id:	3.5V @ 220µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	73W (Tc)
FET Feature:	Super Junction
Input Capacitance (Ciss) (Max) @ Vds:	770pF @ 500V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	450 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IPP80R450P7XKSA1 is a single MOSFET that is classified as a field effect transistor (FET). It is a semiconductor device that is capable of controlling current in electric circuits through the application of an electrostatic power field generated by electric charge at the gate. The device is a N-channel MOSFET, which means that the gate potential regulates the flow of electrons between the drain and source. The IPP80R450P7XKSA1 is designed for use in a variety of applications, including power supplies for electronic devices, consumer electronics, automotive circuits, and more. It also has a wide operating temperature range, -55°C to +150°C, making it suitable for use in many environments. Additionally, it has a low thermal resistance, ensuring efficient heat dissipation at high temperatures, and a high drain-source breakdown voltage, allowing it to be used in high-voltage circuits. The IPP80R450P7XKSA1 offers a range of features that make it suitable for high-performance applications. It is capable of switching up to 50V and 13A of continuous current and has a low gate drive power requirement, making it ideal for use in fast switching applications. It is also very reliable and has a long-lasting performance, making it a viable choice for any application that requires a dependable, high-quality device. In summation, the IPP80R450P7XKSA1 is a single MOSFET that is highly versatile and capable of being used in a wide range of applications. Its features, including its wide operating temperature range, low thermal resistance, and high drain-source breakdown voltage, make it suitable for use in various environments and applications. Its ability to switch up to 50V and 13A of continuous current, coupled with its low gate drive power requirement, make it a great option for high-speed switching circuits. In terms of reliability and durability, the IPP80R450P7XKSA1 is a no-brainer for any application that demands a dependable device.

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