IRFR15N20DPBF

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IRFR15N20DPBF is a n-channel dual MOSFET, which is designed for power applications supporting wide range of voltages and loadings. The device is suitable for driving LED displays, DC motor controls, brushless DC motor drives, power interference, and power supplies applications.

The IRF15N20DPBF comprises two independent power MOSFETs, each offering excellent RDS(ON), and low gate charge (Qg), without any significant performance segregation between the two. This device is characterized by low on-resistance and high current handling capability, with excellent thermal stability and fast switching performance.

Working principle

MOSFETs are based on a three-terminal structure, with source, gate and drain terminals. The source and drain are connected to the channel and when a voltage is applied to the gate, electron current can flow. This creates a channel between source and drain through which the current flows.

The IRF15N20DPBF works on a few principles, including the short-channel effect, where the channel length is below a certain threshold and the resulting voltage at the gate reflects the number of carriers in the channel; the channel-length modulation effect, where the channel length can be varied in proportion to the voltage applied to the gate terminal; and the gate capacitance effect, which governs the gate-to-source capacitance.

When an electric field is applied perpendicular to the gate-oxide layer of the MOSFET, the electric field induces a negative ionic charge (inversion layer). The negative charge attracts positive charges and forms a depletion region between the two charges, known as the depletion layer. This acts as a barrier to the electrons and reduces their mobility.

The application of a voltage between the gate and source terminals of the MOSFET creates an electric field in the channel. This electric field lowers the threshold voltage, which allows electrons to flow in the channel. In addition, the electric field modulates the channel length, which further modulates the current flow through the channel.

Application field

IRFR15N20DPBF is suitable for highside and lowside battery diverting functions in automotive, bus, industrial and many other applications. The device is capable of driving high side and low side loads, and up to 50 V supply voltage.

It is used for DC motor control applications such as Electronic Throttle Control Modules (ETCMs), Electric Power Steering (EPS), and other Sensors and Brake Control Applications (SCAs). These applications require a wide range of input and output voltages.

The device is also used in high current and high speed switching applications such as Brushless DC motor drives and power interference applications. In these scenarios, high speed turning on and off of the power is necessary to provide efficient operation.

IRF15N20DPBF is also used for LED display circuits and power supplies such as power amplifiers and power converters, where low on-resistance and high current outputs are required.

Conclusion

The IRF15N20DPBF is a dual n-channel MOSFET, designed for power applications, offering excellent RDS(ON), low gate charge (Qg), without any significant performance segregation between the two. Its low on-resistance and high current handling capability, make it suitable for driving LED displays, DC motor control, brushless DC motor drives, power interference, and power supplies applications.

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