Memory ic bandwidth vs data rate - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
AK93C55CL-ND	AK93C55CL	AKM Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (128 x 16) Clock Frequency: 4MHz Memory Interface: SPI Voltage - Supply: 1.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Supplier Device Package: 8-SON	1000 Order	1+: $0
MTFC16GJGDQ-AIT ZTR-ND	MTFC16GJGDQ-AIT Z TR	Micron Technology Inc.	View more Series: eMMC Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
MT53B256M64D2NK -062WT:BTR-ND	MT53B256M64D2NK -062 WT:B TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Clock Frequency: 1600MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
MT53B384M64D4NK -053WTES:ATR-ND	MT53B384M64D4NK -053 WT ES:A TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Clock Frequency: 1866MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
MT42L64M64D2LL- 18IT:C-ND	MT42L64M64D2LL- 18 IT:C	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (64M x 64) Clock Frequency: 533MHz Memory Interface: Parallel Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25C ~ 85C (TC)	1000 Order	1+: $0
IS29GL256S-10DH B013-ND	IS29GL256S-10DH B013	Cypress Semiconductor Corp	View more Series: GL-S Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Write Cycle Time - Word, Page: 60ns Access Time: 100ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
MT29F4G08ABBFAH 4-AATES:F-ND	MT29F4G08ABBFAH 4-AATES:F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
1265-1017-5-ND	AT25DF041A-SH-B	Adesto Technologies	View more Packaging: Tube Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Clock Frequency: 70MHz Write Cycle Time - Word, Page: 7s, 5ms Memory Interface: SPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	1000 Order	--
MTFC4GMVEA-4MIT -ND	MTFC4GMVEA-4M I T	Micron Technology Inc.	View more Series: eMMC Packaging: Tray Part Status: Discontinued at Digi-Key Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	1000 Order	1+: $0
MT29F128G08AMCA BH2-10IT:A-ND	MT29F128G08AMCA BH2-10IT:A	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Clock Frequency: 100MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--
MT29E512G08CUCD BJ6-6:DTR-ND	MT29E512G08CUCD BJ6-6:D TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Clock Frequency: 167MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
RMLV0816BGSD-4S 2#HC0-ND	RMLV0816BGSD-4S 2#HC0	Renesas Electronics America	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 8Mb (1M x 8, 512K x 16) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $4.3163
MT29F256G08EFCD BWP-10M:DTR-ND	MT29F256G08EFCD BWP-10M:D TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Clock Frequency: 100MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
MT29F64G08CBEDB J4-12IT:DTR-ND	MT29F64G08CBEDB J4-12IT:D TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Clock Frequency: 83MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
MT53B512M64D4NK -053WT:CTR-ND	MT53B512M64D4NK -053 WT:C TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Clock Frequency: 1866MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
AT25160B-XHLHX- T-ND	AT25160B-XHLHX- T	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Preliminary Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
557-1672-2-ND	MT29F4G08ABAEAH 4-IT:E TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11) Base Part Number: MT29F4G08	1000 Order	1+: $0
W25Q64FVSCB1-ND	W25Q64FVSCB1	Winbond Electronics	View more Series: SpiFlash Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Memory Interface: SPI Voltage - Supply: 2.7 V ~ 3.6 V	1000 Order	1+: $0
25AA128-I/WF16K -ND	25AA128-I/WF16K	Microchip Technology	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
25AA160A-I/W15K -ND	25AA160A-I/W15K	Microchip Technology	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
93LC46B/W-ND	93LC46B/W	Microchip Technology	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Memory Interface: SPI Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
MT53D1024M32D4N Q-046AAT:DTR-ND	MT53D1024M32D4N Q-046 AAT:D TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Clock Frequency: 2133MHz Voltage - Supply: 1.1V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
MT40A512M8RH-07 5E:B-ND	MT40A512M8RH-07 5E:B	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Clock Frequency: 1.33GHz Memory Interface: Parallel Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0C ~ 95C (TC)	1000 Order	--
MT51K256M32HF-7 0:BTR-ND	MT51K256M32HF-7 0:B TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR5 Memory Size: 8Gb (256M x 32) Clock Frequency: 1.75GHz Memory Interface: Parallel Voltage - Supply: 1.3 V ~ 1.545 V Operating Temperature: 0C ~ 95C (TC)	1000 Order	1+: $0
MT53D384M64D4KA -046XTES:ETR-ND	MT53D384M64D4KA -046 XT ES:E TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Clock Frequency: 2133MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 105C (TC)	1000 Order	1+: $0
706-1060-5-ND	IS61C5128AS-25Q LI	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.445", 11.30mm Width) Supplier Device Package: 32-SOP	1409 Order	--
BR25H128F-2LBH2 TR-ND	BR25H128F-2LBH2	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Clock Frequency: 10MHz Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	250 Order	250+: $0.559 500+: $0.5507 750+: $0.5424 1250+: $0.5271 2500+: $0.5078 6250+: $0.4908 12500+: $0.4492
93AA66A-I/P-ND	93AA66A-I/P	Microchip Technology	View more Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Memory Interface: SPI Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP Base Part Number: 93AA66A	528 Order	1+: $0.2079 25+: $0.2011 100+: $0.1947
AT28HC256-90JU- 600-ND	AT28HC256-90JU- 600	Microchip Technology	View more Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Write Cycle Time - Word, Page: 10ms Access Time: 90ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	96 Order	1+: $5.3613 25+: $5.1587
25AA080C-I/P-ND	25AA080C-I/P	Microchip Technology	View more Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP Base Part Number: 25AA080C	52 Order	1+: $0.3528 25+: $0.3374 100+: $0.3245
428-4196-ND	S29GL256P11TFIV 10	Cypress Semiconductor Corp	View more Series: GL-P Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	1000 Order	--
25LC160D-I/P-ND	25LC160D-I/P	Microchip Technology	View more Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP Base Part Number: 25LC160D	1000 Order	--
AT25DF021A-XMHN -B-ND	AT25DF021A-XMHN -B	Adesto Technologies	View more Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Clock Frequency: 104MHz Write Cycle Time - Word, Page: 8s, 2.5ms Memory Interface: SPI Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TC) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	1000 Order	2300+: $0.4657
25AA256-E/P-ND	25AA256-E/P	Microchip Technology	View more Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40C ~ 125C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP Base Part Number: 25AA256	1000 Order	300+: $0.7462
IS63LV1024-12KL -ND	IS63LV1024-12KL	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tube Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 12ns Access Time: 12ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	1000 Order	--
IS42RM16200D-6B LI-ND	IS42RM16200D-6B LI	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 32Mb (2M x 16) Clock Frequency: 166MHz Access Time: 6ns Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	348+: $1.9807
S72XS256RE0AHBJ 23-ND	S72XS256RE0AHBJ 23	Cypress Semiconductor Corp	View more Series: XS-R Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH, DRAM Memory Size: 256Mbit Flash, 2565Mbit DDR DRAM Clock Frequency: 108MHz Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	2200+: $2.9342
R1LV0108ESN-5SI #B0-ND	R1LV0108ESN-5SI #B0	Renesas Electronics America	View more Packaging: Tube Part Status: Not For New Designs Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 55ns Access Time: 55ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.450", 11.40mm Width) Supplier Device Package: 32-SOP	1000 Order	--
W632GU8MB-11-ND	W632GU8MB-11	Winbond Electronics	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Clock Frequency: 933MHz Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0C ~ 95C (TC)	1000 Order	242+: $3.7592
S29GL512S11GHI0 23-ND	S29GL512S11GHI0 23	Cypress Semiconductor Corp	View more Series: GL-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	2700+: $3.971

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