RMLV0816BGSD-4S2#HC0 Allicdata Electronics
Allicdata Part #:

RMLV0816BGSD-4S2#HC0-ND

Manufacturer Part#:

RMLV0816BGSD-4S2#HC0

Price: $ 4.75
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 8M PARALLEL 52TSOP
More Detail: SRAM Memory IC 8Mb (1M x 8, 512K x 16) Parallel 4...
DataSheet: RMLV0816BGSD-4S2#HC0 datasheetRMLV0816BGSD-4S2#HC0 Datasheet/PDF
Quantity: 1000
1000 +: $ 4.31629
Stock 1000Can Ship Immediately
$ 4.75
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 8Mb (1M x 8, 512K x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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RMLV0816BGSD-4S2#HC0 application field and working principle

RMLV0816BGSD-4S2#HC0 memory is a type of Non-Volatile Memory (NVM), which is widely used in embedded systems. It is an SLC (Single-Level Cell) Flash memory, which is typically used for bi-directional memory applications requiring fast read/write access. This type of memory provides reliable and efficient storage option for both small and large scale systems.

Application Fields

RMLV0816BGSD-4S2#HC0 memory is mainly used in embedded applications such as consumer products, industrial equipment, automotive electronics and communications systems. Some of its key functions are in automotive application such as providing non-volatile storage facilities for car computers, controlling engine ignition systems, controlling fuel injectors on day-night circuit, storing car global configurations and providing secure boot systems.

This memory is also used in military-grade applications such as aerospace systems and control systems, missile guidance systems and medical electronics.

Working Principle

RMLV0816BGSD-4S2#HC0 memory utilizes the SLC(Single-Level Cell) Flash technology. This type of memory is based on the principle of flash memory where electrons are used to store the data. This memory is constructed from charge-trap cells that are formed from silicon-doped dielectric layers sandwiched between two conductive layers (source and drain lines).

When power is supplied to the device, the electrons are trapped in the cell, forming a positive charge “1”. As the electrons are liberated from the cells, a negative charge “0” is formed. By simply reversing the power to the cell, the charge can be changed to the opposite state, thus representing “1” and “0”. The number of electrons trapped in the cell determines the charge capacity and thus how much data can be stored in each cell.

The cells are organized into blocks which can be individually programmed and erased. The technology also ensures that in the event of power loss, the data stored in the memory is not lost, as the chip is able to retain its data for a specified amount of time.

Conclusion

RMLV0816BGSD-4S2#HC0 memory is a SLC(Single-Level Cell) Flash memory which is used in a variety of embedded systems. Its reliable and fast data transfer capabilities makes it an ideal choice for automotive, military and aerospace applications. Its cells are constructed from silicon-doped dielectric layers which makes it able to retain data accurately and retain its data in the event of power loss.

The specific data is subject to PDF, and the above content is for reference

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