Allicdata Part #: | S72XS256RE0AHBJ23-ND |
Manufacturer Part#: |
S72XS256RE0AHBJ23 |
Price: | $ 3.23 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH RAM 256MIT PARALLEL |
More Detail: | FLASH, DRAM Memory IC 256Mbit Flash, 2565Mbit DDR ... |
DataSheet: | S72XS256RE0AHBJ23 Datasheet/PDF |
Quantity: | 1000 |
2200 +: | $ 2.93423 |
Specifications
Series: | XS-R |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH, RAM |
Technology: | FLASH, DRAM |
Memory Size: | 256Mbit Flash, 2565Mbit DDR DRAM |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MemoryThe S72XS256RE0AHBJ23 product is part of the family of Cypress SuperFlash memory specifically designed to utilize the functionality of the company\'s trademark SuperFlash technology. It offers high-speed parallel operations, fast programming speeds, low power consumption, and easy-to-implement design features. This type of memory is typically used in demanding industrial applications and is used to store critical data, audio, image and other information-rich content. As an innovative solution for high-speed, low-power applications, the S72XS256RE0AHBJ23 offers a great combination of advanced features that provide enhanced performance in all areas of memory operation. These advanced features of the memory device include:Synchronous Programming: The device supports asynchronous and synchronous programming for faster programming operations and data transfers. High Capacity: The device provides up to 256 Mbits of storage capacity, enabling the storage of large amounts of data in a single memory device.Data Retention: The data stored on the device is retained through power cycles and shock.Power Consumption: The device is designed to operate at low power levels and to consume little energy, improving total system performance.Security Features: The device features onboard security controls that prevent unauthorized access to the data stored on the device and prevent data corruption.The working principle of the S72XS256RE0AHBJ23 memory device is based on advanced circuit design techniques. The combination of innovative design and sophisticated process technologies allows for significant increases in data throughput and reduced power usage. The S72XS256RE0AHBJ23 supports up to 8-bit operations, providing higher data bandwidths and improved performance. The device also supports multiple external memory buses, providing an efficient communication interface between the various components of a system. This type of memory device is suitable for a wide range of applications including: computer systems and medical imaging systems, satellite communication systems, data storage, industrial control systems, automotive systems, and more. With its advanced features and functionality, the S72XS256RE0AHBJ23 memory is ideal for applications that require fast data transfers, reliable data storage, as well as low power levels and enhanced security.When designing a system with the S72XS256RE0AHBJ23 memory device, engineers must be mindful of the device\'s power, clock and data characteristics. The key parameters that need to be taken into consideration include, the clock frequency, data rate and the amount of data that will be transferred. These parameters will determine the power consumption of the device and how long data can safely be stored on the device without corruption. In addition, the S72XS256RE0AHBJ23 memory device offers advanced features and functions that are designed to improve system performance. These features, such as Interrupt Service Routine (ISR), Error Correction Code (ECC), Ready/Busy Control (R/B), Memory Protection and many more, can be utilized to make sure that data is transferred securely and with enhanced performance. The Cypress S72XS256RE0AHBJ23 memory device is a reliable, cost-effective solution for demanding industrial applications. With its high capacity, fast programming speed, low power consumption, and onboard security features, the device is an ideal choice for a variety of industrial applications. This type of memory is widely used in applications that require data transfer rates, protection from unauthorized access, and long-term data retention capabilities. The S72XS256RE0AHBJ23 is an invaluable solution for memory-intensive applications. With its advanced SuperFlash technology, the device offers an enhanced level of performance that can’t be matched by other memory devices. For these reasons, the S72XS256RE0AHBJ23 memory device is an excellent choice for those who require a reliable, high performance memory solution.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "S72X" Included word is 11
Part Number | Manufacturer | Price | Quantity | Description |
---|
S72XS256RE0AHBH10 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBH20 | Cypress Semi... | 3.72 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJ20 | Cypress Semi... | 3.72 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBHH3 | Cypress Semi... | 4.16 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJ13 | Cypress Semi... | 4.16 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJH3 | Cypress Semi... | 4.57 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBHH0 | Cypress Semi... | 4.7 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJ10 | Cypress Semi... | 4.7 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBH23 | Cypress Semi... | 3.23 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJ23 | Cypress Semi... | 3.23 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
S72XS256RE0AHBJH0 | Cypress Semi... | 5.15 $ | 1000 | IC FLASH RAM 256MIT PARAL... |
Latest Products
MT53D512M64D4NZ-053 WT ES...
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
ECF620AAACN-C1-Y3-ES
LPDDR3 6G DIE 192MX32Memory IC
MT53B384M64D4NK-053 WT ES...
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
70V25S45J
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
71321LA55JI8
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
7027L55PFI8
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...