Mkp 0,56 f 10% 305 vac x2 - Allicdata Electronics

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TPH6R004PLLQ-ND	TPH6R004PL,LQ	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 87A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 200A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 20V Power Dissipation (Max): 1.8W (Ta), 81W (Tc) Operating Temperature: 175C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.2381
TPN2R805PLL1Q-N D	TPN2R805PL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25C: 139A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 2.4V @ 300A Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3.2nF @ 22.5V Power Dissipation (Max): 2.67W (Ta), 104W (Tc) Operating Temperature: 175C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.2775
TPH4R10ANLL1Q-N D	TPH4R10ANL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 92A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6.3nF @ 50V Power Dissipation (Max): 2.5W (Ta), 67W (Tc) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.4673
TPH6R30ANLL1Q-N D	TPH6R30ANL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 66A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 500A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 50V Power Dissipation (Max): 2.5W (Ta), 54W (Tc) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.292

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