TPH4R10ANL,L1Q

Gate Charge (Qg) (Max) @ Vgs:	75nC @ 10V
Package / Case:	8-PowerVDFN
Supplier Device Package:	8-SOP Advance (5x5)
Mounting Type:	Surface Mount
Operating Temperature:	150°C
Power Dissipation (Max):	2.5W (Ta), 67W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6.3nF @ 50V
Vgs (Max):	±20V
Series:	U-MOSVIII-H
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Rds On (Max) @ Id, Vgs:	4.1 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	92A (Ta), 70A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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TPH4R10ANL,L1Q Application Field and Working PrincipleIntroduction The TPH4R10ANL,L1Q is a single-node transistor field effect transistor (FET) manufactured by Toshiba Semiconductor America, Inc. It is particularly suitable for use in high-power applications and is able to provide high switching speed and excellent static performance, making it an ideal choice for high-frequency DC-DC converters, motor control, and automotive power management.Application Field The TPH4R10ANL,L1Q is mainly used in high-power applications where a switch with high on resistance is required. It is used in motor controllers, automotive power management systems, high frequency DC-DC converters, and power supplies. It is also suitable for switching high voltage and current in the automotive environment.FeaturesThe TPH4R10ANL,L1Q offers superior switching speed and on resistance. With its low on-resistance and fast switching speed it enables power devices to operate more efficiently. It is also suitable for operating in hostile environments and can operate at a temperature range from -40oC to 175oC. The device features an integrated substrate diode, which provides improved gate capacitance and gate voltage protection. The integrated substrate diode also reduces ringing and overshoot in high frequency DC-DC converters. Additionally, the device has a good noise immunity and can withstand high dV/dt and dI/dt.Working Principle The TPH4R10ANL,L1Q is a single-node FET with a field effect channel. The device consists of a semiconductor channel between the source and drain. The channel is formed by a gate voltage applied to the gate terminal which results in a layer of electrons over the channel which in turn causes a high impedance between the source and drain. When a sufficient gate voltage is applied, a current will pass through the device, causing it to turn on. The current can be controlled by varying the gate voltage.ConclusionThe TPH4R10ANL,L1Q is a single-node transistor field effect transistor (FET) manufactured by Toshiba Semiconductor America, Inc. It is suitable for high power applications where high on-resistance, switching speed, and excellent static performance are essential. The device offers superior switching speed and on resistance, integrates a substrate diode, and can withstand high dV/dt and dI/dt. It is used in motor control, automotive power management, high frequency DC-DC converters, and power supplies. The working principle can be attributed to the semiconductor channel formed between the source and drain when an appropriate gate voltage is applied.

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