| Allicdata Part #: | TPN2R805PLL1Q-ND |
| Manufacturer Part#: |
TPN2R805PL,L1Q |
| Price: | $ 0.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | X35 PB-F POWER MOSFET TRANSISTOR |
| More Detail: | N-Channel 45V 139A (Ta), 80A (Tc) 2.67W (Ta), 104W... |
| DataSheet: | TPN2R805PL,L1Q Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.27752 |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C |
| Power Dissipation (Max): | 2.67W (Ta), 104W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3.2nF @ 22.5V |
| Vgs (Max): | ±20V |
| Series: | U-MOSIX-H |
| Vgs(th) (Max) @ Id: | 2.4V @ 300µA |
| Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 139A (Ta), 80A (Tc) |
| Drain to Source Voltage (Vdss): | 45V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TPN2R805PL,L1Q Application Field and Working Principle
TPN2R805PL,L1Q is a type of Field Effect Transistor, often referred to as UNFET (Ultra-Narrow FET). This transistor is widely used in various areas such as automotive, industrial, telecommunication, networking and consumer electronics applications. The fact that it is an ultra-narrow FET makes it especially useful for applications that require high performance such as power supply and high speed switching. This article will explore the application field and working principle of the TPN2R805PL,L1Q.
The TPN2R805PL,L1Q\'s main applications are in high-speed switching due to its ultra-narrow design. It is used in high-frequency switches, low-voltage, haptic switches, and high voltage/current switching. Because of its fast switching speed, this transistor is also used in digital and analog circuits, such as logic gates and data conversion circuits, and in power amplifiers. It is also used in automotive, industrial and consumer electronic products.
The working principle of the TPN2R805PL,L1Q is based on the generation and control of electron and hole motional fields in a narrow channel. This field effect transistor operates through an insulated gate electrode and produces an effect analogous with that of an electric field inversely proportional to the electric field strength. This type of transistor also has very low source-drain capacitance, wide bandwidth and low input impedances. Its ultra-narrow geometry in terms of channel width results in reduced capacitances and improved switching performance.
In addition to its high-speed switching capabilities, the TPN2R805PL,L1Q also features excellent thermal stability, making it well suited for applications that require long-term stability, such as in telecom applications. Furthermore, TPN2R805PL,L1Q has very low on-resistance, which means it can handle higher current demands, resulting in lower power losses. The transistor also provides excellent immunity to electrostatic discharge (ESD) and track-to-track coupling. This makes it an ideal choice for applications where sensitive electronic circuitry is involved.
In conclusion, TPN2R805PL,L1Q is an ultra-narrow FET designed to provide high speed switching, high performance, and excellent thermal stability. Its low on-resistance, wide bandwidth, low capacitances, and its ESD protection make it a perfect choice for high-performance applications. Applications include high- frequency switching, data conversion circuits, logic gates, and power amplification.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TPN2R203NC,L1Q | Toshiba Semi... | 0.34 $ | 1000 | MOSFET N-CH 30V 45A 8-TSO... |
| TPN2R304PL,L1Q | Toshiba Semi... | -- | 15035 | MOSFET N-CH 40V 80A TSONN... |
| TPN2R703NL,L1Q | Toshiba Semi... | 0.34 $ | 10000 | MOSFET N-CH 30V 45A 8-TSO... |
| TPN2010FNH,L1Q | Toshiba Semi... | 0.48 $ | 1000 | MOSFET N-CH 250V 5.6A 8TS... |
| TPN22006NH,LQ | Toshiba Semi... | 0.26 $ | 1000 | MOSFET N CH 60V 9A 8-TSON... |
| TPN2R503NC,L1Q | Toshiba Semi... | 0.41 $ | 1000 | MOSFET N CH 30V 40A 8TSON... |
| TPN2R805PL,L1Q | Toshiba Semi... | 0.3 $ | 1000 | X35 PB-F POWER MOSFET TRA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
TPN2R805PL,L1Q Datasheet/PDF