TPN2R805PL,L1Q Allicdata Electronics
Allicdata Part #:

TPN2R805PLL1Q-ND

Manufacturer Part#:

TPN2R805PL,L1Q

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X35 PB-F POWER MOSFET TRANSISTOR
More Detail: N-Channel 45V 139A (Ta), 80A (Tc) 2.67W (Ta), 104W...
DataSheet: TPN2R805PL,L1Q datasheetTPN2R805PL,L1Q Datasheet/PDF
Quantity: 1000
5000 +: $ 0.27752
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3.2nF @ 22.5V
Vgs (Max): ±20V
Series: U-MOSIX-H
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 139A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TPN2R805PL,L1Q Application Field and Working Principle

TPN2R805PL,L1Q is a type of Field Effect Transistor, often referred to as UNFET (Ultra-Narrow FET). This transistor is widely used in various areas such as automotive, industrial, telecommunication, networking and consumer electronics applications. The fact that it is an ultra-narrow FET makes it especially useful for applications that require high performance such as power supply and high speed switching. This article will explore the application field and working principle of the TPN2R805PL,L1Q.

The TPN2R805PL,L1Q\'s main applications are in high-speed switching due to its ultra-narrow design. It is used in high-frequency switches, low-voltage, haptic switches, and high voltage/current switching. Because of its fast switching speed, this transistor is also used in digital and analog circuits, such as logic gates and data conversion circuits, and in power amplifiers. It is also used in automotive, industrial and consumer electronic products.

The working principle of the TPN2R805PL,L1Q is based on the generation and control of electron and hole motional fields in a narrow channel. This field effect transistor operates through an insulated gate electrode and produces an effect analogous with that of an electric field inversely proportional to the electric field strength. This type of transistor also has very low source-drain capacitance, wide bandwidth and low input impedances. Its ultra-narrow geometry in terms of channel width results in reduced capacitances and improved switching performance.

In addition to its high-speed switching capabilities, the TPN2R805PL,L1Q also features excellent thermal stability, making it well suited for applications that require long-term stability, such as in telecom applications. Furthermore, TPN2R805PL,L1Q has very low on-resistance, which means it can handle higher current demands, resulting in lower power losses. The transistor also provides excellent immunity to electrostatic discharge (ESD) and track-to-track coupling. This makes it an ideal choice for applications where sensitive electronic circuitry is involved.

In conclusion, TPN2R805PL,L1Q is an ultra-narrow FET designed to provide high speed switching, high performance, and excellent thermal stability. Its low on-resistance, wide bandwidth, low capacitances, and its ESD protection make it a perfect choice for high-performance applications. Applications include high- frequency switching, data conversion circuits, logic gates, and power amplification.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "TPN2" Included word is 7
Part Number Manufacturer Price Quantity Description
TPN2R203NC,L1Q Toshiba Semi... 0.34 $ 1000 MOSFET N-CH 30V 45A 8-TSO...
TPN2R304PL,L1Q Toshiba Semi... -- 15035 MOSFET N-CH 40V 80A TSONN...
TPN2R703NL,L1Q Toshiba Semi... 0.34 $ 10000 MOSFET N-CH 30V 45A 8-TSO...
TPN2010FNH,L1Q Toshiba Semi... 0.48 $ 1000 MOSFET N-CH 250V 5.6A 8TS...
TPN22006NH,LQ Toshiba Semi... 0.26 $ 1000 MOSFET N CH 60V 9A 8-TSON...
TPN2R503NC,L1Q Toshiba Semi... 0.41 $ 1000 MOSFET N CH 30V 40A 8TSON...
TPN2R805PL,L1Q Toshiba Semi... 0.3 $ 1000 X35 PB-F POWER MOSFET TRA...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics