TPH6R004PL,LQ

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The TPH6R004PL,LQ is a high voltage, logic-level drain-source N-channel MOSFET. It is part of a family of high voltage, logic-level MOSFETs, developed specifically to enable the design and construction of high voltage, low-power systems. As with any MOSFET, the TPH6R004PL,LQ is a three terminal device, with the terminals being labeled Drain, Source, and Gate. The TPH6R004PL,LQ is designed to be used as a switch, and its operation is based on the principle of drain-source voltage control. A voltage applied to the Gate terminal of the FET will control the conductance between the Drain and Source terminals. As the Gate voltage increases, the Drain-Source voltage also increases, and with it, the drain current.

The TPH6R004PL,LQ is an ideal MOSFET for use in high voltage applications. It has a breakdown voltage of 500V, a maximum Drain Source Voltage (Vds) of 500V, and a maximum current (Id) of 1A. Additionally, the TPH6R004PL,LQ has a very low on-state resistance (Rds) of 0.0014Ω, making it suitable for use in low-voltage, low-power applications. This low Rds ensures that the power dissipation in the circuit is kept to a minimum, thus allowing for efficient system operation.

The TPH6R004PL,LQ is also suitable for use in high-frequency switching applications, thanks to its low gate capacitance. The device has a maximum junction temperature of 175°C, making it well-suited for operations in extreme environments. The device also has a very low reverse transfer capacitance, making it suitable for use in high-speed switching applications.

The TPH6R004PL,LQ is an ideal solution for numerous applications, including power switching, motor control, and high-speed switching. The Gate terminal of the device can be driven directly by logic signals, meaning it can be used in applications that require rapid switching. The device is also suitable for use in low-voltage, low-power circuits, thanks to its low Rds.

In summary, the TPH6R004PL,LQ is a high voltage, logic-level drain-source N-channel MOSFET, designed for use in high-voltage, high-speed, low-power applications. Its low Rds ensures that power dissipation in the circuit is kept to a minimum, while its low gate capacitance makes it ideal for use in high-frequency switching applications. Its reverse transfer capacitance is also very low, making it suitable for use in high-speed switching applications. The Gate terminal of the device can be driven directly by logic signals, meaning that it can be used in applications that require rapid switching.

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