MT48LC4M16A2P-6 IT:G TR Allicdata Electronics
Allicdata Part #:

MT48LC4M16A2P-6IT:GTR-ND

Manufacturer Part#:

MT48LC4M16A2P-6 IT:G TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 64M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 167MHz 5.5...
DataSheet: MT48LC4M16A2P-6 IT:G TR datasheetMT48LC4M16A2P-6 IT:G TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Base Part Number: MT48LC4M16A2
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an integral part of all electronic systems and technologies, particularly in the fields of computing, communications, and data science. One of the most widely used types of memory is the MT48LC4M16A2P-6 IT:G TR, which is a type of DDR2 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) with an embedded Low-Power self-refresh (LPSDR) mode. This memory is used in applications where high-speed and low power consumption requirements are essential.

The MT48LC4M16A2P-6 IT:G TR is a 4Mx16 (bitsxwords) device that is able to deliver data at speeds of up to 800MHz with support for CAS latency of 8 and refresh cycles of 8 ms. It is a DRAM (Dynamic Random Access Memory) integrated circuit with an embedded Low-Power self-refresh (LPSDR) mode. This device is ideal for a variety of applications such as networking, military, telecommunication, automotive, networking, home entertainment, and more.

The memory is available as a single-die or multi-die device and is designed to operate in either single-bank or dual-bank implementations. In single-bank implementations, the device can be configured to process commands in a single cycle, resulting in higher performance. In dual-bank implementations, the device can process multiple commands simultaneously in two separate banks, resulting in lower latency.

The MT48LC4M16A2P-6 IT:G TR’s working principle is that it stores bits of data in tiny cells, which are made up of a capacitor coupled to an access transistor. Each of these cells is connected to a column and a row of memory. When a certain memory address is selected, an addressing scheme is used to encode the address for the selected row and column. The state of the access transistor determines whether the capacitor can be charged or discharged, which controls the value of the data stored in the cell.

The MT48LC4M16A2P-6 IT:G TR memory is a reliable, robust, and low power memory solution for applications requiring high-performance, low latency, and low power usage. It is an ideal solution for a variety of applications such as networking, data communications, military, telecommunication, automotive, home entertainment, and more. It is an efficient and effective memory solution, providing optimal performance and reliability. With its low power consumption, high speed, and low latency, the MT48LC4M16A2P-6 IT:G TR is an ideal memory solution for all types of applications.

The specific data is subject to PDF, and the above content is for reference

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