MT48LC4M32B2B5-7:G TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	128Mb (4M x 32)
Clock Frequency:	143MHz
Write Cycle Time - Word, Page:	14ns
Access Time:	5.5ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	90-VFBGA
Supplier Device Package:	90-VFBGA (8x13)
Base Part Number:	MT48LC4M32B2

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Introduction:

The MT48LC4M32B2B5-7:G TR (MT48LC4M32B2B5) is a type of memory integrated circuit (IC) developed by Micron Technology, Inc. It is an easy-to-use product that combines four pairs of memory blocks, one pair consisting of synchronous SRAM (Static Random Access Memory) and the other three consisting of NOR flash memory. The device is designed and optimized to offer a low noise and radiation-free solution, while providing high performance and control over access and data paths.

Application Field of MT48LC4M32B2B5-7:G TR:

The application fields of MT48LC4M32B2B5 are numerous and varied. It can be used in a variety of settings, from industrial and automotive to mobile computing and telecommunications applications. The product also supports a wide range of data storage functions including program storage, data storage, and FIFO (First In First Out) buffer storage.In industrial applications MT48LC4M32B2B5 can be used for external data retention, temporary program storage and boot code storage. It can also be used in a variety of embedded systems that require low power and high performance. The device is well-suited to automotive applications, as it has memory with fast write and read access times, making it a suitable solution for on-board vehicle computers. It can also be used in diagnostic systems and tire pressure monitoring systems.In the mobile computing and telecommunications sector, the MT48LC4M32B2B5 can be used for code storage and extended data retention. It can also be used in home and building automation systems, and as an embedded storage solution for automatically optimizing system performance.

Working Principle of MT48LC4M32B2B5-7:G TR:

The working principle of MT48LC4M32B2B5 is based on the use of four non-volatile memory blocks, which can be organized into two different pairs. The first pair contains two blocks of asynchronous SRAM, while the other three blocks are composed of NOR flash memory. The device also includes multiple internal memory structures and structures that enable it to support multiple instruction, address, data and configuration buses.At the heart of the working principle of MT48LC4M32B2B5 lies its Synchronous SRAM (also known as SDRAM or Synchronous DRAM) which is the main memory block used by the device. The SRAM utilizes a parallel bus to transfer the data and control signals, allowing for fast and efficient data access. The device also includes an internal clock-and-data stability circuit that ensures the device’s data retention is stable over time.The second memory block consists of three NOR flash memory blocks. This type of memory differs in many ways from SRAM or DRAM, as it uses a series of floating gates to store data, making it non-volatile. Each of the three flash memory blocks is organized into 64K-byte pages, thereby providing large amounts of storage capacity.When the device is operating, the control logic is provided by a clock circuit, which serves to synchronize communication between the internal memory blocks and the external data bus. Once the read/write operations have been completed, the controls will loop back to the internal logic.

Conclusion:

The MT48LC4M32B2B5-7:G TR is an integrated circuit that brings together four memory blocks in a single device and is designed to provide high performance and control over access and data paths. The product is used in a myriad of applications, from industrial and automotive to mobile computing and telecommunications. The two primary memory blocks are synchronous SRAM and NOR flash memory, which each offer a unique set of features and functionality. The device also includes a variety of internal memory structures and clock-and-data stability circuits that enable it to maintain low noise and radiation-free operation.

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