MT48LC4M32B2TG-6A IT:L

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	128Mb (4M x 32)
Clock Frequency:	167MHz
Write Cycle Time - Word, Page:	12ns
Access Time:	5.4ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package:	86-TSOP II

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Introduction

MT48LC4M32B2TG-6A IT:L (hereinafter referred to as MT48LC4M32B2TG) is a type of DRAM (Dynamic Random Access Memory). Specifically, it is a type of SDRAM (Synchronous DRAM) with an asynchronous reset capability. It is intended for general purpose applications, such as Flash memory devices, routers, digital signal processors (DSPs), and microcontroller systems.MT48LC4M32B2TG supports up to 4 Gbit of memory organized as 32M words (256M bytes) of 16 bits each, and operates at a low voltage of 3.3V.

Application Field

MT48LC4M32B2TG has a wide range of application fields. It is suitable for network storage and industrial control applications, such as driver systems, router systems and control systems. It can also be used in multimedia data storage applications and in medical imaging systems. It is suitable for automotive, military and aerospace applications, as well as for mobile phones, portable electronics and accessories. In addition, it can be used in high-performance computing and communication equipment, such as servers, data centers and routers.

Working Principle

The working principle of MT48LC4M32B2TG is based on DRAM technology. DRAM acts as a buffer between the device (processor or memory) and the memory chip, and can execute a large amount of data operations at a low cost. The core of the DRAM is a capacitor, which stores the data bit. The voltage level on the capacitor is used to represent the data bit. The MT48LC4M32B2TG consists of two basic components: the sense amplifier and the write circuit. The sense amplifier is used to read the voltage level of the capacitor and then translate it into a readable data bit. The write circuit is used to write the data bit back to the capacitor when necessary.In order to access data in DRAM, the processor or memory device sends an address to the DRAM chip, and then the DRAM chip reads the address and accesses the data. This information is read by the sense amplifier and is then written to the write circuit. The write circuit then writes the data back to the capacitor.

Conclusion

MT48LC4M32B2TG is a type of DRAM that is suitable for a wide range of applications, such as Flash memory devices, routers and control systems. Its working principle relies on capacitors, sense amplifiers and write circuits, which enable the DRAM to function properly. As a result, it is an ideal choice for devices that require low cost access to large amounts of data.

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