Allicdata Part #: | MT48LC2M32B2B5-6AIT:JTR-ND |
Manufacturer Part#: |
MT48LC2M32B2B5-6A IT:J TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 64M PARALLEL 90VFBGA |
More Detail: | SDRAM Memory IC 64Mb (2M x 32) Parallel 167MHz 5.4... |
DataSheet: | MT48LC2M32B2B5-6A IT:J TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 64Mb (2M x 32) |
Clock Frequency: | 167MHz |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 90-VFBGA |
Supplier Device Package: | 90-VFBGA (8x13) |
Base Part Number: | MT48LC2M32B2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an essential component of integrated circuit developed to store data. It is categorized within two main categories of volatile and nonvolatile. Volatile memories hold data temporarily, only as long as power is applied; non-volatile memories retain the information stored even in the absence of power.MT48LC2M32B2B5-6A IT:J TR is an example of a nonvolatile SRAM (Static Random Access Memory) that is designed for a wide range of applications. When compared to much slower Dram and traditional Sram generally used for industrial, consumer, and medical applications, this type of SRAM can offer a wide range of advantages.
MT48LC2M32B2B5-6A IT:J TR utilizes low power flow while providing fast performance capabilities and low latency, allowing manufacturers to create highly efficient systems that can run data-demanding tasks at improved speed all while saving energy. This type of SRAM has become increasingly popular in operations that require high-speed data input-output (I/O), such as in telecommunications or networking; in fact, its throughput is 3.2Gbps/bank, which is quite impressive.
The application field and working principle of MT48LC2M32B2B5-6A IT:J TR is based on synchronous SRAM architecture. The SRAM core is made up of two hardwired address and data buses held in common between the two port interfaces. This system ensures low latency writing and reading of data, which is particularly and highly advantageous for systems that require real-time response. Data is stored in cells which use eight transistors for writing and reading data in order to save power and provide improved speeds.
MT48LC2M32B2B5-6A IT:J TR is also equipped with two ports – Port 0 and Port 1. Each port has data inputs, data outputs, and a common control signal line. Port 0 is responsible for data writing, while port 1 is used for reading the data. Each port has access to the 8-bit data source and the address pins. The address inputs to both ports are identical and provide the data size in the memory. Data is written by feeding the data signal into port 0 and applying a write control signal; data is read by sending an address signal to port 1 and applying a read control signal.
Other important features that set MT48LC2M32B2B5-6A IT:J TR apart are auto refresh capability and individual write/read address registers. The auto refresh feature helps in maintaining data integrity by continually refreshing the data stored in the volatile cell. Each port contains individual write/read address registers which allows the user to write data to a particular address even while reading from another address in the same memory. This feature allows the user to access multiple addresses in the memory at the same time.
With an impressive speed of 25.6ns cycle time, very low latency writing and reading of data, and on-chip write/read address registers, there\'s no doubt that MT48LC2M32B2B5-6A IT:J TR is an attractive alternative to traditional SRAM used in numerous industrial, consumer, and medical applications. What makes this particular SRAM so attractive is that it combines the highest possible performance and low power flow while providing high reliability and data integrity.
The specific data is subject to PDF, and the above content is for reference
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