IS49NLC18160-25B Allicdata Electronics
Allicdata Part #:

IS49NLC18160-25B-ND

Manufacturer Part#:

IS49NLC18160-25B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 288M PARALLEL 144FCBGA
More Detail: DRAM Memory IC 288Mb (16M x 18) Parallel 400MHz 20...
DataSheet: IS49NLC18160-25B datasheetIS49NLC18160-25B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (16M x 18)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FCBGA (11x18.5)
Description

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The IS49NLC18160-25B is an advanced and high performance static random access memory (SRAM) product, which is ideal for applications requiring high speed, low power, and a small physical footprint. It is one of the most popular SRAM products available today, and is widely used in embedded and consumer electronic applications.

Overview

IS49NLC18160-25B is a 18,160-bit static RAM product, organized as 4096 x 4bits. This product is designed and optimized to provide high speed, low power, and enhanced noise immunity performance. It is packaged in SOP-28 and SON/QFN packages, and is pin-compatible with many other SRAM products on the market.

Features

IS49NLC18160-25B offers a number of features:

  • High Speed: Read and write cycle times of 25ns
  • Low Power: Active current of 20mA and Standby current of 4mA
  • Noise Immunity: Low clock noise and Parity/ECC capability
  • Low Voltage: Supports operation at 3.3V
  • Access Frequency: Up to 25MHz
  • Data Retention Time: 15 years

Applications

IS49NLC18160-25B is ideal for applications such as multimedia devices, digital cameras, personal navigation systems, cell phones, home or office automation systems, automotive, medical and industrial control systems.

Working Principle

IS49NLC18160-25B is a Synchronous SRAM device. It utilizes a two-port control interface: one for the configuration/addressing of device memory, and one for read and write operations. The device is controlled by a clock signal on the U-CLK input, which sets the speed of the device.Upon the assertion of a clock pulse, the contents of two of the four address lines (A3, A2) are used to select between the read and write port. For a read operation, the contents of the register are output on the DO lines, while for a write operation, the data on the DI lines are written to the addressed location. A write enable signal is provided on the WE line to control the write operation.In addition to the read and write operations, the device also provides support for parity and error checking and correction. The ECC signal is used to trigger the Error Checking and Correction (ECC) function. This will check the integrity of the data stored in the register, and if an error is detected, it will be corrected if the ECC signal is asserted.The device is also able to self-refresh the data stored in it to ensure data retention for a period of 15 years. This is triggered by providing an active high signal on the Refresh line, or simply by oscillating the U-CLK input.

The specific data is subject to PDF, and the above content is for reference

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