IS49RL18320-093EBL

IS49RL18320-093EBL Memory

The IS49RL18320-093EBL is an integrated, high-density synchronous SRAM memory with Error Checking & correcting (ECC). It incorporates a high-speed self refresh controller, dual 16-bit data ports, and up to 512-kbit densities. The memory also features Enhanced Burst Mode (EBM), which increases performance while maintaining low power consumption in an extended temperature range.

The IS49RL18320-093EBL is ideally suited for a wide range of applications, such as sensor storage and data logging, mobile device memory and audio/video buffering. It provides an excellent solution for embedded systems that require high performance and low power consumption.

Application Fields:

• Consumer electronics
• Industrial control
• Medical imaging
• Memory-intensive gaming
• Wearable devices

Working Principle:

The IS49RL18320-093EBL uses a self-refresh mechanism to provide low power operation. The memory utilizes the EBM to initiate a basic three-state burst cycle when requests are received during the self-refresh period. The memory controller starts the burst cycle when a valid address is received and the burst request is latched into the read/write circuits. The memory controller then issues a column address strobe pulse to initiate the burst cycle. The EBM then transfers high speed data without the need for additional strobes, which significantly reduces power consumption and increases transfer speed.

The memory is also protected by ECC, which operates in the background and automatically detects and corrects the read errors. The ECC utilizes a time-division multiplexed Hamming code, which enables the detection of single-bit and double-bit read errors with high accuracy. If a single-bit error is detected, the bit will be inverted, allowing the memory to detect and correct the read error before valid data is provided. If a double-bit error is detected, the memory will report the error and discard the data.

The IS49RL18320-093EBL is a reliable and efficient memory option for system designers. With its high performance, low power consumption, and enhanced burst mode, the memory offers a great solution for applications that require high density and fast data transfer. The error checking & correcting effectively ensures data integrity and ensures reliable operation.