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Memory

IS49NLC18320-25BLI is a low power static random access memory (SRAM) device developed by Integrated Silicon Solution, Inc. (ISSI). The part is fabricated in a 0.5 µm triple-metal CMOS process and is available in a 24-pin plastic TSOP package. The basic elements of the device include a control block, an address block, a 256 x 16 SRAM array, and an output block. The device requires no external refresh and has an output enable (OE) option to protect the contents of the SRAM array. Additionally, the device features a high voltage operational mode that allows operation over an extended temperature range.

IS49NLC18320-25BLI Application Field

The IS49NLC18320-25BLI is ideal for use in embedded designs in a wide variety of applications. It is used extensively in communications, automotive, industrial and medical applications. It is particularly well-suited for applications that require high reliability, low power consumption and/or extended temperature range operation.

The IS49NLC18320-25BLI device is suited for a wide range of memory applications due to its low power requirements, high speed access and high data retention. It is suitable for use as an embedded static random access memory (SRAM), a write read cache, a boot strap ROM, an instruction set based memory, or a nonvolatile memory. Its low power consumption and extended temperature range capability make it a good choice for applications that require high reliability, long battery life and reliable operation in extreme temperatures. In addition, the device is capable of providing diagnostic features that enable it to perform additional functions such as a reset counter, system timer and memory address paging.

IS49NLC18320-25BLI Working Principle

The IS49NLC18320-25BLI is a low power static random access memory (SRAM) device containing a 256 x 16 SRAM array, an address block, a control block and an output block. It is fabricated on a 0.5 µm triple-metal CMOS process and is available in a 24-pin plastic TSOP package. The device does not require an external refresh and has an output enable (OE) option to protect the contents of the SRAM array.

The SRAM array is an array of memory cells arranged in rows and columns. Memory cells are used to store digital information. The memory cells are accessed by giving the address of the memory cell. The array is organized in such a way that when given the address of a memory cell, the data stored in that memory cell can be read or written. The address of a memory cell is dependent upon the row and column of the memory cell in the array.

The control block is responsible for controlling the operation of the device. This block has a variety of control signals that are used to write data to the memory cells, read data from the memory cells, put the device in high voltage operational mode and other operational modes. The control signals are generated by the device itself or externally from the microprocessor.

The address block is responsible for controlling the address of the memory cells. It receives the address of the memory cells from the microprocessor and provides the address to the control block. The address block can also be used for additional tasks such as paging.

The output block is responsible for driving the data from the memory cells to the output pins of the device. It is controlled by the control signals from the control block. It also provides buffering functions and other operations.

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