Allicdata Part #: | IS49NLC18320-25BI-ND |
Manufacturer Part#: |
IS49NLC18320-25BI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 576M PARALLEL 144FCBGA |
More Detail: | DRAM Memory IC 576Mb (32M x 18) Parallel 400MHz 20... |
DataSheet: | IS49NLC18320-25BI Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 576Mb (32M x 18) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 144-TFBGA |
Supplier Device Package: | 144-FCBGA (11x18.5) |
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IS49NLC18320-25BI is a type of memory, specifically an asynchronous static random access memory (SRAM). It is used in a wide range of medium to large-scale applications and is most commonly found in embedded systems, gaming cabinets, and consumer electronics. The IS49NLC18320-25BI can be operated in either a static or dynamic mode, and provides synchronous or asynchronous capabilities. The memory is based on a 16-bit memory cell, and is offered in several different densities.
The main purpose of the IS49NLC18320-25BI is to provide high-speed data storage, along with the capabilities to be read and written to quickly. The device also has the ability to retain data even when power is removed. The asynchronous design of the IS49NLC18320-25BI makes it more suitable for applications that need data to be transferred to and from memory without the need for additional clock signals.
For static operation, the IS49NLC18320-25BI utilizes a static, single-access cycle. This type of cycle involves two memory cycles, one setup and one read or write cycle. During the setup cycle, the address of the memory cell is set, and the memory cell’s data is determined. During the subsequent read or write cycle, the determined data is accessed or written. This type of operation is slower than the dynamic mode, but provides the ability to access data in a constant-time fashion.
In dynamic mode, the IS49NLC18320-25BI implements a multiple-access cycle. This type of cycle involves multiple memory cycles and utilizes a clock signal. During this cycle, the address and data of the memory cell must be determined prior to the clock signal being applied. The clock signal is then used to control the link between the address/data pins and the memory cell. This type of operation is faster than the static mode, but only allows data to be accessed in specific intervals.
The IS49NLC18320-25BI is a very versatile memory device, offering a number of capabilities. The device is manufactured using a 0.25 Micron CMOS process, and operated using either +5V or a +3.3V power source. The IIL49NLC18320-25BI has a maximum operating frequency of 25 MHz, and is available in densities up to 8 Mb. It has an access time of 35ns, and an operating temperature range of -40°C to +85°C.
The IIL49NLC18320-25BI is designed to replace prior-generation asynchronous SRAMs, such as the IS47L16333-25. It is well suited for applications that require a medium to high-density storage solution, such as gaming cabinets, networking equipment, and medical technology. The device is also well suited to embedded applications that demand high data throughput.
In summary, the IS49NLC18320-25BI is a type of asynchronous static random access memory (SRAM). It is capable of working in either static or dynamic mode, and is offered in several densities. The device is offer superior performance to prior-generation asynchronous devices and is ideal for medium to high-density applications where data throughput is demanded. The device also offers Reduced Operating Power (ROP) support to ensure low power consumption.
The specific data is subject to PDF, and the above content is for reference
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IS49NLC18320-25BI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
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