What are the main parameters of FET?

The main technical parameters.

The main parameter of field effect transistor can be divided into DC parameters and AC parameters as follows.

( 1 ) When the gate current is coupled with a fixed reverse voltage, the gate current will have a very small gate current, which is indicated by the symbol Ig.

For the junction type field effect product ,  Ig between 10 9 and 10 12 A;

For MOS transistors, Ig less than 10 -4A. It is because the gate current is very small, so the field effect transistor has a very high impedance.

( 2 ) The ratio of the drain voltage VIs and the leakage current ID is called the pass conductive resistance of the pipe when the Vis = 0 and the Vis is sufficient, the commonly used symbol RoN said.

( 3 ) The pinch voltage Vp and the turn-on voltage VVp are for the junction tube, when the reverse voltage Vcs between the gate source is increased to a certain value, no leakage current ID exists regardless of the drain source voltage Vns size. This Ip causes the voltage starting to be zero to be called the pinch-off voltage of the pipe. V is generally for MOS transistors, indicating the gate voltage value at 1 : 1. N-channel enhancement and P-channel depletion type V are positive, and the N-channel depletion type and P-channel enhancement V are negative.

( 4 ) For enhanced MOS transistor, the leakage current should be 0 after Vcs = 0, that is, after the voltage Vns is added between the source and drain, however, due to the existence of reverse current in PN junction, there is still a small current, called cut-off leakage current

( 5 ) saturation leakage current when Vcs = 0 and Vns are large enough, the saturation value of the leakage current is the saturated leakage current of the pipe, which is usually represented by IDSS.

If you want to know more, our website has product specifications for FETs, you can go to ALLICDATA ELECTRONICS LIMITED to get more information