The insulated gate bipolar transistor (IGBT) is composed of power MOSFET and bipolar transistor GTR, which combines the advantages of fast switching speed, low control voltage, high current of bipolar transistors, high reverse voltage, and small pressure drop during conduction. At present, the current / voltage capacity of  high voltage IGBT module has reached 2000A/3300V, the switching speed is fast and the working frequency is up to 150kHz. It is widely used in the fields of motor frequency conversion speed control, program control switch power, non power supply UPS of computer system, frequency conversion air conditioner, CNC machine bed servo control and so on.

The basic  structure  of the insulated gate field effect transistorbasic is a three terminal voltage control device consisting of a gate G, a emitter E, a collector C, and a simplified equivalent circuit of the internal structure of the N channel IGBT.

The package is the same as ordinary bipolar high power tube, and has many kinds of encapsulation.

In short, IGBT is equivalent to a thick base PNP transistor driven by MOSFET.

In the N channel IGBT simplified equivalent circuit, the RN is a modulation resistor in the PNP tube base area, which is composed of N channel MOSFET and PNP transistors. The opening and closing of the drive voltage between the gate and the emitter is determined by Uce. 

When the voltage Ucs between the gate and the emitter is positive and larger than the gate opening voltage UGE, it is formed. The channel provides the base current for the PNP transistor, and further IGBT guide.

At this time, the cavitation (minority carrier) is injected into the P+ region to modulate the conductivity of N region to reduce N in the N region.

The resistance RN of the zone makes the IGBT with high pressure also has very small on state voltage drop. No signal between gate ejection poles

Or when the reverse voltage is applied, the channel in MOSFET disappears, the base current of the PNP transistor is cut off, and the IGBT is turned off.

If you want to know more, our website has product specifications for the IGBT, you can go to ALLICDATA ELECTRONICS LIMITED to get more information

IGBT : HGTD1N120BNS9A

Description:IGBT 1200V 5.3A 60W TO252AA ,IGBT NPT 1200V 5.3A 60W Surface Mount TO-252AA