Allicdata Part #: | RF101A2ST-32TB-ND |
Manufacturer Part#: |
RF101A2ST-32 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 200V 1A MSR |
More Detail: | Diode Standard 200V 1A Through Hole MSR |
DataSheet: | RF101A2ST-32 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Package / Case: | DO-41 Mini, Axial |
Supplier Device Package: | MSR |
Operating Temperature - Junction: | 150°C (Max) |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 870mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
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The RF101A2ST-32 is a single rectifier diode in a Super TOP3 package from Rohm Semiconductor. It has a low forward voltage drop of 0.95V and a reverse current of 10 microamperes at 100V. The device is suitable for high current switching applications, such as for switching power supplies or for power rectification. The RF101A2ST-32 features a built-in protection mechanism to protect against damage caused by reverse-polarity connection.
The RF101A2ST-32 is an ideal choice for applications requiring high current switching, such as in switching power supplies, DC-DC converters, motor control and other rectifying applications. It is designed with a low forward voltage drop of 0.95V and a low reverse current of 10 microamperes at 100 volts. The switching device features a built-in protection mechanism which protects against damage caused by reverse-polarity connection.
The RF101A2ST-32 has an ultra-high surge voltage rating of 1200V, allowing for the use of higher voltage switching circuits. The diode is also rated for high temperatures, up to 150°C. This allows the device to be used in a wide range of applications, from consumer electronics to automotive systems. The RF101A2ST-32 is fast switching, with a recovery time of just 10nanoseconds. It is also RoHS-compliant, which makes it an environmentally-friendly choice.
The working principle of the RF101A2ST-32 is based on the PN-junction diode. When a PN-junction diode is reversed biased, no current flows. When the diode is forward biased, the current begins to flow. When the forward bias voltage exceeds the device\'s PIV rating, it cuts the current and switches off. This device has a breakdown voltage of 1200V at a forward current of 10mA.
The RF101A2ST-32 also features a low junction capacitance of just 6.5pF as well as a high forward surge current rating of 25A. This allows the device to operate at frequencies up to 500KHz with very little loss in power. The diode also has a high reverse voltage rating of 100V, allowing it to remain operational in applications with higher voltages.
The RF101A2ST-32 is a reliable and cost-efficient solution for high current switching applications, such as for switching power supplies, motor control and other rectifying applications. The low junction capacitance and high surge current rating make it ideal for high frequency switching, while the ultra-high surge voltage rating and protection against reverse-polarity connection ensure the device remains reliable and safe even in the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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