RF101L2SDDTE25 Discrete Semiconductor Products |
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Allicdata Part #: | RF101L2SDDTE25TR-ND |
Manufacturer Part#: |
RF101L2SDDTE25 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 200V 1A PMDS |
More Detail: | Diode Standard 200V 1A Surface Mount PMDS |
DataSheet: | RF101L2SDDTE25 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.12056 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 870mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | PMDS |
Operating Temperature - Junction: | 150°C (Max) |
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A RF101L2SDDTE25 diode, sometimes called a single rectifier, belongs to the category of diodes and is a semiconductor device composed of a P-N junction. The “RF” prefix indicates it has been designed for use in RF (radio frequency) applications. The “L2SD” indicates it is a basic two-junction device with a Schottky Rectification (SR) barrier. The number 25 indicates it has a maximum reverse voltage of 25 volts.
A diode can be defined as a device that conducts current easily in one direction and offers a high degree of resistance to the current flow in the opposite direction. In other words, it can convert alternating current (AC) to direct current (DC) and is often used as a rectifier. Diodes are also used for switching (clipping) and protecting circuits. In the case of the RF101L2SDDTE25, the PN junction allows current to flow in the forward direction, while reverse current flow is blocked.
The RF101L2SDDTE25 belongs to the family of Schottky Silicon-Controlled Rectifiers (SCRs), which provide superior performance compared to traditional diode rectifiers. Schottky rectification is achieved with the use of a semiconductor (Schottky barrier metal) junction structure, with a lower forward voltage drop and a higher temperature stability than PN junction-based devices. The Schottky rectifier’s fast switching speed and low resistance also make it ideal for RF applications.
The RF101L2SDDTE25 can be used in a variety of applications, such as high-frequency power rectification, DC motor control, switching power supplies, and regulating current in adjustable DC sources. It is also often used in high-speed communications circuits and power-related circuits, as the diode is required to operate at very high frequencies. The RF101L2SDDTE25 is designed to withstand high temperatures, up to 150°C, although its reverse voltage rating is fixed at its maximum value of 25 volts.
The working principle of the RF101L2SDDTE25 is quite simple. When an alternating current is applied to the diode, the negative half-cycle of the alternating current causes a reverse current to flow through the PN junction, which is blocked by the diode’s Schottky rectifier. The positive half-cycle is the forward direction so it allows current to flow to the diode’s output. This rectification process continues as long as the alternating current is applied and converts the AC to pulsating DC.
In summary, the RF101L2SDDTE25 can be classified as a single rectifier and is a type of Schottky silicon-controlled rectifier (SCR) designed for RF applications. It is used for rectification, switching, and protecting circuits, and is able to withstand high temperatures. Its working principle is relatively simple: when an alternating current is applied to the diode, the reverse current flow is blocked and the forward current is allowed to flow, thereby rectifying the alternating current into a pulsating direct current.
The specific data is subject to PDF, and the above content is for reference
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