RF103L2STE25 Discrete Semiconductor Products |
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Allicdata Part #: | RF103L2STE25TR-ND |
Manufacturer Part#: |
RF103L2STE25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 200V 1A PMDS |
More Detail: | Diode Standard 200V 1A Surface Mount PMDS |
DataSheet: | RF103L2STE25 Datasheet/PDF |
Quantity: | 1000 |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | PMDS |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | RF103L2S |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 920mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
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RF103L2STE25 is a single-channel rectifier diode, with a typical forward current of 10A and a reverse voltage of 100V. It is widely used in switching power supplies, LED lighting, and automotive applications, power supply rectification, and other energy-conversion and power management-related applications.
A rectifier diode is an electronic component which allows current to flow in one direction only. It is composed of an anode and a cathode. Typically, the anode faces the positive side of the power source and the cathode faces the negative. The RF103L2STE25 is also known as a "freewheeling diode" as it helps to eliminate voltage spikes created when a device switches from current to no current.
In operation, the RF103L2STE25’s current carrying capability is limited between 10 amperes (max) and 5 milliamperes (min). Operation at values in between these limits is per diode requirements.
The RF103L2STE25 has a maximum power dissipation rating of 75W, a voltage drop of 1V or less and an average forward voltage of 0.7V or less. In addition, it has a low junction capacitance of 1.2nF and a high reverse recovery time of 40ns. It also has a maximum reverse current of 25mA and a maximum junction temperature of 150°C. The construction of the diode includes a plastic encapsulated package, a metal can and an epoxy coating.
The working principle of the diode is based on its forward voltage drop, which is the voltage across the diode when there is some current flowing through it. This voltage drop is due to losses inside the diode caused by the internal resistance. In the forward direction, that is when there is current flowing from the anode to the cathode, the voltage drop is relatively low and the diode allows the current to flow. However, when there is no current, that is when the diode is said to be in a reverse-biased condition, then the voltage drop is higher and the diode does not allow current to flow.
In summary, the RF103L2STE25 is used in applications such as switching power supplies, LED lighting and automotive applications due to its wide range of forward current, reverse voltage and temperature capabilities. Its working principle allows for a low forward voltage drop and high reverse recovery time for power management and energy conversion. In addition, it is constructed with a plastic encapsulated package, a metal can and an epoxy coating for improved durability. Its high current and voltage capabilities, along with its low capacitance and junction temperature make it a very reliable and convenient device.
The specific data is subject to PDF, and the above content is for reference
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