RF101LAM2STR Discrete Semiconductor Products |
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Allicdata Part #: | RF101LAM2STR-ND |
Manufacturer Part#: |
RF101LAM2STR |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 200V 1A PMDTM |
More Detail: | Diode Standard 200V 1A Surface Mount PMDTM |
DataSheet: | RF101LAM2STR Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.05378 |
6000 +: | $ 0.04840 |
15000 +: | $ 0.04302 |
30000 +: | $ 0.04033 |
75000 +: | $ 0.03576 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 870mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | PMDTM |
Operating Temperature - Junction: | 150°C (Max) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The RF101LAM2STR is an ultrahigh-speed, low-power Schottky rectifier. It has a low forward voltage (VF) of 0.22V typical and low junction capacitance of just 0.085pF typical. As a result, RF101LAM2STR can provide superior frequency-dependent current-blocking capabilities that are essential for high-frequency rectification.
Application Field
The RF101LAM2STR is a single diode rectifier with a low forward voltage (VF), low junction capacitance, and superior frequency-dependent current-blocking capabilities. It is used in various applications including high-frequency rectification, switching power supplies, and power management circuits.
The RF101LAM2STR is suitable for use in high-efficiency switching power supplies that are employed in many consumer electronics products, including computers, servers, mobile phones, and LCD TVs. It can also be used in a variety of other applications, such as automotive electronics, medical devices, and industrial equipment.
The RF101LAM2STR is also suitable for use in RFID (Radio Frequency Identification) and ZigBee-enabled devices. These types of devices require devices that can provide low insertion loss for efficient communications, as well as devices with a low junction capacitance for high power transfer efficiency.
Working Principle
The RF101LAM2STR is a single diode rectifier which operates on the principle of reverse bias. When the diode is reverse biased, the electrons in the depletion layer are accelerated to the junction, causing them to move through the forward biased junction. This produces a current in the opposite direction, called reverse leakage current.
When a current flows through a diode, the forward biasing produces a voltage drop. This voltage drop is determined by the diode\'s characteristics, the forward current, and the junction temperature. Therefore, the voltage drop of the diode is useful for controlling circuit voltage and current levels.
The RF101LAM2STR is designed to provide low forward voltage (VF), low junction capacitance (Cj), and superior frequency-dependent current-blocking capabilities. This makes it desirable for use in high-efficiency switching power supplies and other power management circuits.
Conclusion
The RF101LAM2STR is an ultrahigh-speed, low-power Schottky rectifier. It has a low forward voltage (VF) of 0.22V typical and low junction capacitance of just 0.085pF typical. As a result, RF101LAM2STR can provide superior frequency-dependent current-blocking capabilities that are essential for high-frequency rectification. This makes it suitable for use in various applications, such as high-efficiency switching power supplies, RFID and ZigBee-enabled devices, automotive electronics, medical devices, and industrial equipment.
The specific data is subject to PDF, and the above content is for reference
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