1.5SMC91A TR13

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The 1.5SMC91A TR13 is a TVS diode which is designed to protect sensitive electronics from destructive electrostatic discharge (ESD) transients. In order to make this diode work properly, there are several components that must be taken into account in order to achieve reliable protection. This article will discuss the application fields and working principle of the 1.5SMC91A TR13.

The 1.5SMC91A TR13 is used in applications where ESD protection is needed during the handling of sensitive electronic devices. This diode is designed for telecommunications, computer peripherals, and other electronic devices with high-speed data processing. The main feature of this diode is its low capacitance which allows for a fast response time and low signal distortion. The response time of the 1.5SMC91A TR13 varies based on the applied voltage and current. At 5V minimum breakdown voltage, the diode is generally triggered within 1-2ns or less.

The working principle of the 1.5SMC91A TR13 is based on the principle of avalanche breakdown. The diode has a reverse-biased p-n junction which is designed to withstand large amounts of voltage. When an over-voltage is applied to this diode, the reverse-biased junction will start to avalanche breakdown. This breakdown will result in high current flow which will be used to clamp the voltage and protect other components from being damaged. The diode also has a low impedance state which helps to reduce noise and provide better protection.

The 1.5SMC91A TR13 has a low profile SMC package which makes it well suited for use in compact electronics devices. The diode can handle up to 16kV ESD without any performance degradation and provide protection up to 2.2A of peak pulse current. The device offers excellent EMI/RFI immunity and can be used as a general-purpose ESD protection component in various electronic devices.

In summary, the 1.5SMC91A TR13 is a TVS diode designed for ESD protection in telecommunications, computer peripherals, and other high-speed data processing applications. Its low capacitance and high breakdown voltage make it suitable for use in compact devices. The diode works on the principle of avalanche breakdown and provides excellent EMI/RFI immunity. The device can handle up to 16kV ESD without any performance degradation and provide protection up to 2.2A of peak pulse current.

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