
Allicdata Part #: | 10ETF06STRL-ND |
Manufacturer Part#: |
10ETF06STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 10A D2PAK |
More Detail: | Diode Standard 600V 10A Surface Mount TO-263AB (D²... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 145ns |
Current - Reverse Leakage @ Vr: | 100µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB (D²PAK) |
Operating Temperature - Junction: | -40°C ~ 150°C |
Base Part Number: | 10ETF06 |
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Introduction to 10ETF06STRL
The 10ETF06STRL is a single-die, surface-mount Fast Recovery Rectifier. This device is suitable for a wide range of general-purpose applications and is designed to withstand high-speed switching. The 10ETF06STRL Rectifier is a low reverse leakage rectifier, providing fast recovery characteristics, and also provides improved surge capabilities. It also comes with a low reverse voltage drop and a low forward voltage drop.
Application Field
The 10ETF06STRL is ideal for a wide range of general-purpose applications. The fast recovery characteristics of this device make it suitable for use in AC/DC and DC/DC converter applications, high frequency switching, DC inverter and battery charger applications, LED lighting applications, and many more. The device is also capable of withstanding higher current surges, which is beneficial for applications where the devices may be exposed to a high current load.
Working Principle
The core of the 10ETF06STRL Rectifier is in its design. The two main elements of the 10ETF06STRL are the active zone and the control zone. The active zone is composed of several different junctions. These junctions consist of a P-type semiconductor surrounded by an N-type semiconductor. This design allows the device to have its normal rectifying characteristics. It will conduct current when the applied voltage is positive, and block when the applied voltage is negative.
The control zone is composed of a specially designed capacitor that stores energy to quickly reverse the flow of current. This allows the device to recover quickly after being exposed to a high current surge. This also results in improved operating efficiency as the device can quickly recover from high currents. The control zone also helps ensure consistently stable operation over a wide range of temperatures.
By controlling the capacitance of the control zone, the device can obtain either fast recovery characteristics or regular rectifying characteristics depending on the application. The control circuit also allows the device to be used in applications that require reverse current protection.
Conclusion
In conclusion, the 10ETF06STRL Rectifier is an ideal device for a range of general-purpose applications. The compact size and fast recovery characteristics make it suitable for high frequency switching and provides improved surge capabilities. It also provides low reverse leakage, a low reverse voltage drop, and a low forward voltage drop. In addition, the control zone allows the device to be configured to either fast recovery or regular rectifying characteristics with the addition of a control circuit. With all these features, the 10ETF06STRL is an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VS-10ETF12SPBF | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETS12FPPBF | Vishay Semic... | 2.19 $ | 180 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETF04PBF | Vishay Semic... | 0.92 $ | 1000 | DIODE GEN PURP 400V 10A T... |
VS-10ETS12FP-M3 | Vishay Semic... | 2.58 $ | 774 | DIODE GEN PURP 1.2KV 10A ... |
10ETF04S | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 10A D... |
10ETS12FP | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
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VS-10ETF10S-M3 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 1KV 10A D2... |
VS-10ETF02STRR-M3 | Vishay Semic... | 0.77 $ | 1000 | DIODE GEN PURP 200V 10A D... |
10ETF06STRL | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 10A D... |
VS-10ETF02PBF | Vishay Semic... | 0.92 $ | 1000 | DIODE GEN PURP 200V 10A T... |
VS-10ETF10SPBF | Vishay Semic... | 1.15 $ | 1000 | DIODE GEN PURP 1KV 10A TO... |
VS-10ETF04STRL-M3 | Vishay Semic... | 0.77 $ | 1000 | DIODE GEN PURP 400V 10A D... |
VS-10ETF12STRLPBF | Vishay Semic... | 1.26 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETF04S-M3 | Vishay Semic... | 0.64 $ | 1000 | DIODE GEN PURP 400V 10A D... |
VS-10ETF02STRLPBF | Vishay Semic... | 1.19 $ | 1000 | DIODE GEN PURP 200V 10A D... |
VS-10ETF02SPBF | Vishay Semic... | 0.99 $ | 1000 | DIODE GEN PURP 200V 10A T... |
10ETF12S | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETF02STRL-M3 | Vishay Semic... | 0.76 $ | 1000 | DIODE GEN PURP 200V 10A D... |
VS-10ETS08-M3 | Vishay Semic... | 1.37 $ | 1000 | DIODE GEN PURP 800V 10A T... |
VS-10ETS08STRL-M3 | Vishay Semic... | 0.78 $ | 1000 | DIODE GEN PURP 800V 10A D... |
VS-10ETS08STRRPBF | Vishay Semic... | 0.97 $ | 1000 | DIODE GEN PURP 800V 10A T... |
VS-10ETS08FP-M3 | Vishay Semic... | 1.58 $ | 1000 | DIODE GEN PURP 800V 10A T... |
VS-10ETS08SPBF | Vishay Semic... | 0.93 $ | 1000 | DIODE GEN PURP 800V 10A T... |
VS-10ETF12STRRPBF | Vishay Semic... | 1.26 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
10ETF10S | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 10A D2... |
10ETF06FP | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 10A T... |
VS-10ETS08PBF | Vishay Semic... | 1.39 $ | 1000 | DIODE GEN PURP 800V 10A T... |
VS-10ETF06-M3 | Vishay Semic... | 1.72 $ | 1000 | DIODE GEN PURP 600V 10A T... |
VS-10ETS08STRR-M3 | Vishay Semic... | 0.73 $ | 1000 | DIODE GEN PURP 800V 10A D... |
VS-10ETF12SLHM3 | Vishay Semic... | 0.88 $ | 1000 | DIODES - D2PAK-E3Diode St... |
VS-10ETF12S-M3 | Vishay Semic... | 0.62 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETF12STRL-M3 | Vishay Semic... | 0.76 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
10ETF10STRL | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 10A D2... |
VS-10ETS12S-M3 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETS12-M3 | Vishay Semic... | 1.16 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
VS-10ETF02STRRPBF | Vishay Semic... | 1.52 $ | 1000 | DIODE GEN PURP 200V 10A D... |
VS-10ETS12SLHM3 | Vishay Semic... | 0.78 $ | 1000 | DIODES - D2PAK-E3Diode St... |
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