10ETF10STRL Allicdata Electronics
Allicdata Part #:

10ETF10STRL-ND

Manufacturer Part#:

10ETF10STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1KV 10A D2PAK
More Detail: Diode Standard 1000V 10A Surface Mount TO-263AB (D...
DataSheet: 10ETF10STRL datasheet10ETF10STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 310ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 10ETF10
Description

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10ETF10STRL Application Field and Working Principle

10ETF10STRL, or high efficiency fast recovery rectifier is a diode implementation of storable rectifier which helps realize low power applications among other applications. The 10ETF10STRL has two terminals - an anode and a cathode - and uses semiconductor material like Silicon or Germanium as the substance between the two to carry current. It usually has a higher capacity than regular diodes due to its application in highly sensitive areas and is also fast-acting.

Applications & Features of 10ETF10STRL

10ETF10STRL are mainly used for applications that require high speed, low-power rectifier. They can be used in voltage regulation, energy conversion, and pulse shaping applications since their fast recovery time allows for more precise control. They are also used in stabilizing low voltage DC power supplies. Additionally, they provide higher power efficiency compared to regular diodes, while they also operate with temperature ranges between 0-120°C. Furthermore, these rectifier diodes can also be used in applications such as static switches, low voltage battery isolation and electro-mechanical switching.

Working Principle of 10ETF10STRL

10ETF10STRL is based on a p-type silicon substrate. It has two electrodes, an anode and a cathode, and uses a thin semiconductor film between the two in order to achieve rectification. The diode essentially consists of p-type and n-type regions that are connected and separated by a thin dielectric film. When a forward bias is applied, a conductive channel is formed, allowing current to flow through the diode. On the other hand, when a reverse bias is applied, there is no conductive channel formed which restricts current flow, and thus allowing the diode to act as an open circuit. Additionally, the junction region of the diode is designed in such a way that the heat generated is able to dissipate quickly. This helps protect the diode from thermal runaway.

Conclusion

10ETF10STRL are one of the most important types of diodes in the electronics industry due to their high power efficiency, fast recovery time, and temperature stability. Their applications range from voltage regulation to pulse shaping, making them an ideal choice for low-power applications. Additionally, due to their fast recovery time, they provide precise control that is unattainable with other types of diodes.

The specific data is subject to PDF, and the above content is for reference

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