11LC160T-E/MS Allicdata Electronics
Allicdata Part #:

11LC160T-E/MS-ND

Manufacturer Part#:

11LC160T-E/MS

Price: $ 0.22
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 16K SINGLE WIRE 8MSOP
More Detail: EEPROM Memory IC 16Kb (2K x 8) Single Wire 100kHz ...
DataSheet: 11LC160T-E/MS datasheet11LC160T-E/MS Datasheet/PDF
Quantity: 1000
2500 +: $ 0.20765
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP
Base Part Number: 11LC160
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a fundamental component of a computer system. It stores data, including applications, user information, preferences, and temporary files. The 11LC160T-E/MS memory module is a type of silicon memory module designed for applications in high performance computing environments.

The 11LC160T-E/MS is a single chip 16MB memory module designed using leading-edge 128Mb CMOS technology. This module offers high performance and low power consumption, making it ideal for a variety of applications such as servers, workstations, embedded systems, media processing and others.

The memory module is ideal for applications that require high data throughput with low power consumption. It offers excellent speed and reliability, with a rated peak throughput of up to 800MB/s. It also offers reduced power consumption due to its advanced design which dissipates heat more efficiently.

The 11LC160T-E/MS supports a variety of performance options, such as programmable read and write throughputs, as well as programmable page sizes. It also supports both single- and two-bank designs, as well as three burst rates for both read and write operations. Furthermore, the module supports refresh operations, allowing data to remain in the same location for more than one read/write cycle.

The 11LC160T-E/MS memory module works by using electrical signals to store and retrieve data. The module is made up of several banks of memory cells, each of which is composed of an access transistor, a capacitor, and an address line. The access transistor controls the flow of electrical current in and out of the memory cell. When a memory request is made, the address line is accessed and the access transistor is activated. This causes an electric current to flow into the capacitor, which changes its electrical charge. This charge change is registered as data and can be recalled later on.

The 11LC160T-E/MS memory module offers the latest in performance, reliability, power consumption, and scalability. It is perfect for embedded systems, media processing, and other applications that require high performance and low power consumption. By utilizing the latest in CMOS technology, the 11LC160T-E/MS is able to offer superior performance and reliability, as well as low power consumption, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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