11LC020-I/SN Allicdata Electronics
Allicdata Part #:

11LC020-I/SN-ND

Manufacturer Part#:

11LC020-I/SN

Price: $ 0.15
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 2K SINGLE WIRE 8SOIC
More Detail: EEPROM Memory IC 2Kb (256 x 8) Single Wire 100kHz ...
DataSheet: 11LC020-I/SN datasheet11LC020-I/SN Datasheet/PDF
Quantity: 2200
1 +: $ 0.13860
25 +: $ 0.12978
100 +: $ 0.12329
Stock 2200Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: 11LC020
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 11LC020-I/SN Application Field and Working Principle

The 11LC020-I/SN is a memory device used in a variety of applications, most notably in the automotive industry. This memory device is commonly used in engines, airbag system controllers, and ABS controllers. It can also be utilized in different kinds of HVAC systems, as well as in a number of other industrial and commercial applications. This memory device is highly durable and reliable, making it an ideal choice for applications where long-term dependability is a requirement.

The 11LC020-I/SN is a very unique type of memory device, as it is a three-transistor cell memory device. This means that each individual memory cell includes three transistors and two logic gates. The transistors are mainly used for setting and reading the logic levels of the memory cell. The logic gates are used for logic state control. This type of memory device is often preferred because it is capable of providing a high level of integrity and accuracy.

The 11LC020-I/SN works by utilizing the power of three transistors to detect changes in the logic state of a memory cell. The three transistors act as three separate memory bits which can be combined together to produce a four-bit value (an 8-bit value in the case of a 16-bit device). When a cell is written to, the logic state is sensed by the transistors and the memory value is then written to the cell. When the cell is read, the three transistors measure the logic state and the memory value is read.

The 11LC020-I/SN also utilizes a unique write process called a “triple-write”. This process includes three steps which have to be completed in order for a memory cell to be written. The first step is “pre-charge”, which entails charging the system bus so that the transistors can detect any changes. The second step is “sense-write”, where the transistors measure the logic state and write the memory value to the cell. Finally, the third step is “write-verify”, where the memory value is synchronized to the system bus.

The 11LC020-I/SN is an excellent option for a variety of memory applications, offers superior reliability and accuracy, and is a great choice for automotive, industrial, and commercial applications. It offers a high level of data integrity and accuracy, making it an ideal choice for many applications. With its triple-write process, it is capable of providing reliable memory values to the system bus. This makes it a great choice for applications where long-term reliability and accuracy are required.

The specific data is subject to PDF, and the above content is for reference

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