150D473X0050A2T

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Tantalum capacitors are a type of electrolytic capacitor, which are polarized capacitors with an anode made of tantalum. Their construction is relatively simple, consisting of a pellet of porous tantalum metal as an anode, covered by an insulating oxide layer that works as the dielectric, and a solid manganese dioxide layer as the cathode. They are then wrapped in an insulating sleeve of epoxy or plastic substance.

The 150D473X0050A2T capacitor is a type of tantalum capacitor which is used in a variety of different applications. It has a nominal capacitance value of 47µF (microfarads), a maximum working voltage of 6.3V (DC) and its dimensions are in the physical form of a 1206 package, measuring 3.2mm x 1.6mm.

The application field of the 150D473X0050A2T capacitor ranges from power management in notebook computers, cellular phones, and other portable devices to automotive applications, where it is used to provide decoupling for power sources in order to minimize power line interference. It is also used in various audio applications, such as power amplifiers and crossover networks, thanks to its small size and relatively high capacitance in comparison to other types of capacitors.

The working principle behind the 150D473X0050A2T capacitor is based on the idea that when a voltage is applied across two opposite spots on its electrolytic oxide layer, an electric current is formed, creating an electrostatic field between them. This field acts as an energy storage device, accumulating electrons and thus creating a capacitance value. The capacitance value is determined by the thickness of the oxide layer, the amount of current flowing through it, and the size of the two contacting surfaces.

In conclusion, the 150D473X0050A2T capacitor is a type of tantalum capacitor which is used for a wide range of applications. Its small size and high capacitance enable it to be used in various markets such as automotive and audio applications. Its working principle is based on electrostatic fields which store energy by accumulating electrons, and its capacitance value is dependent on the oxide layer thickness, current level and the size of the two contacting surfaces.

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