1EDN8550BXTSA1 Integrated Circuits (ICs)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1EDN8550BXTSA1 is a PMIC – Gate Drivers power management IC. This device aids in driving external NMOS transistors, by utilizing a voltage source as a means of controlling current flow. By using a voltage source, instead of a current source, the device can more reliably control the current level of the output transistors. As such, the 1EDN8550BXTSA1 is ideal for applications that require high reliability and precision levels of current control.

The 1EDN8550BXTSA1 can be used in a wide range of applications, such as DC-DC converters, high-side and low-side MOSFET or IGBT gate drivers, and gate driver circuits for DC and AC motors. Additionally, the device has been designed for use in applications that require low power dissipation, high frequency operation, and high output current drive capabilities. The device also has been designed with on-chip protection features that reduce the risk of damage from transient over-voltages, over-currents, and reverse polarity.

At the heart of the 1EDN8550BXTSA1 is an integrated high-side driver circuit that can drive up to 6A peak and 3A DC output current. This high-side driver circuit utilizes a single supply voltage to fully drive the external MOSFET, eliminating the need for a low-side driver. Additionally, the 1EDN8550BXTSA1 also provides an internal voltage clamped to a predetermined level, which protects the device from accidental over-voltage and over-current conditions.

The 1EDN8550BXTSA1 includes a wide range of features, including gate drive integrity monitoring, fault status reporting, adjustable slew rates, and adjustable current limits. Additionally, the device also includes a number of safety features, such as an over-temperature protection and an under-voltage lockout circuit. These features help to ensure that the device is safe and reliable in operation.

The 1EDN8550BXTSA1 is an ideal solution for driving NMOS transistors in a wide range of applications due to its low power consumption, high-side driver capability, integrated protection features, adjustable slew rates, and fault status reporting. Thanks to these features, the device can provide a reliable and high performance solution for applications that require precise current control.

The specific data is subject to PDF, and the above content is for reference