1EZ160D10E3/TR12

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1EZ160D10E3/TR12 Application Field and Working Principle

As a single Zener diode, 1EZ160D10E3/TR12 is widely used in a variety of applications, including power supply systems, communication and signal processing systems, computer networks, instrumentation and control systems, automotive electrical systems and other circuits. It is a small-sized diode with a robust design that ensures a stable performance, high accuracy and long service life.

Application Field

1EZ160D10E3/TR12 consumes very low power as compared to other Zener diodes, and it is suitable for higher power circuits where higher current or higher voltage is necessary. This diode can be found in various applications such as protection circuits, high frequency switching circuits, noise suppressing circuits, serially biased circuits, voltage and current balancing circuits, and other power inrush protection circuits. Moreover, it can also be used as a fast switching element, in controlled rectifier circuits or as a voltage regulator.

Working Principle

The 1EZ160D10E3/TR12 operates at a reverse breakdown voltage given with the voltage-sensitive power dissipation. When the diode reverse current exceeds the specified current limit at the breakdown voltage, the diode will enter the avalanche region. In this region, the matter that determines the behavior of the diode is the number of charge carriers that are collected before it enters the avalanche region. By controlling the applied voltages and currents, the avalanche region can be absent or present, and thus it can control the reverse current and maximum reverse voltage.

When the diode is being used in the avalanche region, if the magnitude of the reverse voltage is higher than the breakdown voltage, a significant amount of current flows through the diode. In this circuicy, the diode is said to be in the breakdown region where it operates in the Zener region and protects the device from further damage. The Zener voltage and operation of the device is determined by its internal resistance, which depends on its doping level.

The 1EZ160D10E3/TR12 Zener diode uses a unique device architecture to allow high power through its conductor while minimizing the amount of reverse current. This diode is able to provide even better performance while still providing a high level of protection from power surges, drops, and other negative stressful energy. This makes it an ideal choice for high power and sensitive applications.

As a single Zener diode, the 1EZ160D10E3/TR12 is a reliable device that provides excellent performance and high accuracy, making it a great choice for applications in which the protection of sensitive components is a major concern. It is also a cost-effective solution for high power applications that require a stable performance and long service life.

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