1EZ160D2E3/TR12

Diodes - Zener - Single

1EZ160D2E3/TR12 is a single Zener diode characterized by a low forward voltage drop and a steep breakdown voltage temperature coefficient. It is used in a variety of applications where low-voltage stability and temperature coefficient are essential. This datasheet provides information about the electrical characteristics, structure, and applications of the device.

Description

The 1EZ160D2E3/TR12 is a single Zener diode with an ultra-low voltage drop of less than 2 volts. It is composed of an anode, cathode, and several layers of active material. The PN junction formed between the anode and the active material is responsible for generating the intended breakdown voltage. The diode is available in a variety of series with breakdown voltages ranging from 27 to 75 volts. Other features include a low dynamic impedance, high maximum reverse power, and negative temperature coefficient.

Mode of Operation

The 1EZ160D2E3/TR12 operates as a Zener diode when an external voltage is applied across its anode and cathode terminals. When no external voltage is applied, the diode does not conduct current, allowing the anode and cathode to polarize. Upon the application of voltage, the diode will switch on, allowing the electrons to flow from the anode to the cathode, limiting the voltage across the device to the specified breakdown voltage. The higher the voltage (up to breakdown voltage), the larger the electrons current.

Application Field

The 1EZ160D2E3/TR12 is a low voltage Zener diode suitable for use in applications where voltage stability or temperature coefficient is critical. Its low forward voltage drop, high maximum reverse power, and low dynamic impedance make it ideal for use in voltage regulator circuits. It has also been used in precision rectifiers, voltage multipliers, and reverse-bias clippers. The diode has also been used in logic circuit applications and TV sets.

Working Principle

At the onset of the bias voltage application, the diode goes into reverse bias mode and electrons are repelled from the cathode and attracted to the anode. As the reverse bias voltage increases beyond the breakdown voltage, a high electric field is formed near the depletion layer which attracts holes from the active material. The combined action of electrons and holes further increases the current, allowing higher voltages (up to breakdown voltage) to be sustained. The reverse current applied towards the anode is blocked, ensuring a stable breakdown voltage. When the reverse voltage is reduced, the diode ceases to function.

Conclusion

The 1EZ160D2E3/TR12 is a single low-voltage Zener diode with an ultra-low voltage drop of less than 2 volts. It is ideal for use in voltage regulator circuits and other applications where voltage stability or temperature coefficient is critical. When an external voltage is applied, the diode will switch on, allowing the electrons to flow from the anode to the cathode, limiting the voltage across the device to the specified breakdown voltage. The higher the voltage (up to breakdown voltage), the larger the electrons current.