1EZ170D5E3/TR8

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1EZ170D5E3/TR8 is an ideal choice for various applications that require a high-performance diode. It belongs to a family of single Zener diodes and is known for its high switching speed, low on-voltage, fast recovery and long life.
In general, Zener diodes are used to create a regulated voltage or current at their output, usually from an unregulated voltage or current, which makes them suitable for a wide range of uses. Specifically, 1EZ170D5E3/TR8 is an excellent choice for voltage and current regulation in RF applications. It is also used in a variety of audio applications.
The working principle of 1EZ170D5E3/TR8 is based on the PN junction, in which one side of the diode is N-type semiconductor and the other is P-type semiconductor. When a reverse-bias voltage is applied to the diode, a depletion layer is formed in the very narrow P-type region and the depletion layer acts as a barrier to the flow of electrons. As the reverse-bias voltage increases, the width of this depletion layer increases which limits the flow of current in the PN junction. This leads to a stable output voltage, and the Zener voltage of the 1EZ170D5E3/TR8 is 170V.
The 1EZ170D5E3/TR8 also offers improved performance in comparison to other single Zener diodes. For example, it has very low turn-on voltage of 1.25V. This feature is specifically designed for RF applications, as it allows the diode to operate more efficiently and reduces power dissipation. Furthermore, the 1EZ170D5E3/TR8 achieves fast switching speed and low leakage current, reducing power consumption in RF applications. It also offers improved transient immunity and ESD protection, offering extra reliability.
In conclusion, the 1EZ170D5E3/TR8 is a high-performance single Zener diode that is suitable for a wide range of applications. It has very low turn-on voltage, fast switching speed and long life, offering improved performance and reliability. It is an ideal choice for voltage and current regulation in RF and audio applications.

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