1EZ190D2E3/TR12 Allicdata Electronics
Allicdata Part #:

1EZ190D2E3/TR12-ND

Manufacturer Part#:

1EZ190D2E3/TR12

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 190V 1W DO204AL
More Detail: Zener Diode 190V 1W ±2% Through Hole DO-204AL (DO-...
DataSheet: 1EZ190D2E3/TR12 datasheet1EZ190D2E3/TR12 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 190V
Tolerance: ±2%
Power - Max: 1W
Impedance (Max) (Zzt): 1700 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 144.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 1EZ190
Description

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Diodes are important components in any electronic circuit, and the single zener diode one of the most widely used types. The 1EZ190D2E3/TR12 is an ideal device for a range of applications due to its lower voltage drop, higher current handling capability and wide working temperature range. In this article, we will introduce the application field and working principle of the 1EZ190D2E3/TR12 diode.

The 1EZ190D2E3/TR12 diode has a wide variety of applications such as TTL logic interface protection, overvoltage protection, reverse-battery protection, ESD current protection, automotive load dump protection, power supply voltage detection and sensing, switching regulator reference voltage, and linear regulator reference voltage. No matter what applications these diodes are used for, the 1EZ190D2E3/TR12 is a reliable and effective single zener diode due to its low Vf, stable Zener voltage, and good power dissipation.

This diode works on the principle of breakdown effect, where current abruptly increases due to a large reverse voltage applied across the diode. The high voltage across the diode junction causes electrons to accelerate, collide with atoms and ionize the lattice structure of atoms. This avalanche effect produces electrons and holes, resulting in a large flow of current. The voltage at which this breakdown begins is called the Zener voltage. For 1EZ190D2E3/TR12 diodes, its Zener voltage is between 9.1V and 11.1V.

For the 1EZ190D2E3/TR12 diode, the Zener voltage is 11.1V and its reverse leakage current is typically 2.0mA at temperature below 25°C and 5.0mA at 125°C. In addition, the typical junction capacitance of the 1EZ190D2E3/TR12 is 0.21pF and the static forward voltage drop is 2.0V max. The combination of these parameters makes the 1EZ190D2E3/TR12 an ideal choice for a variety of applications.

In conclusion, the 1EZ190D2E3/TR12 single zener diode is a reliable and efficient device for a range of applications. It is designed to provide overvoltage protection, reverse-battery protection, ESD current protection, power supply voltage sensing and detection, voltage regulation, and a variety of other uses. The diode works on the principle of breakdown effect, which occurs when a high reverse voltage is applied, and the Zener voltage of this diode is 11.1V. All these characteristics make the 1EZ190D2E3/TR12 a perfect choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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