1EZ170D5E3/TR12 Allicdata Electronics
Allicdata Part #:

1EZ170D5E3/TR12-ND

Manufacturer Part#:

1EZ170D5E3/TR12

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 170V 1W DO204AL
More Detail: Zener Diode 170V 1W ±5% Through Hole DO-204AL (DO-...
DataSheet: 1EZ170D5E3/TR12 datasheet1EZ170D5E3/TR12 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 170V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 1450 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 130.4V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 1EZ170
Description

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Diodes - Zener - Single

1EZ170D5E3/TR12 is a single Zener diode from the 1EZ series. It is a 700 mW Zener diode suitable for a variety of applications such as general purpose switching and protection. This diode is composed of a semiconductor material in an SOD-123 package type.

Application Field

The 1EZ170D5E3/TR12 is a 700 mW Zener diode with a 5.1 VZ low power feature. It is the perfect choice for a variety of general purpose and switching applications. This device’s low zener voltage and low power consumption makes it the ideal device for voltage regulation and pulse-width modulation. It is also suitable for transient and overvoltage protection, buffer circuits, and logic level shifting.

Working Principle

The 1EZ170D5E3/TR12’s Zener diode includes an external connection to a semiconductor material, in which a junction exists between n-type and p-type materials. The junction can be thought of like an electric valve through which current can flow in either direction depending on the applied voltage. In forward bias, for the 1EZ170D5E3/TR12 this occurs when the anode is more positive than the cathode, current passes from the anode to the cathode, allowing the device to act as a resistor. For the 1EZ170D5E3/TR12, it has a breakdown voltage at 5.1V.

When the DC voltage across the diode reaches the Zener breakdown voltage, the Zener effect dominates, allowing the current to flow in the opposite direction due to the reverse bias state. This basically creates a “short-circuit” path from the anode to the cathode, resulting in the Zener voltage being clamped across the two leads. The subsequent clamping of this voltage will result in current being limited through the diode. In the case of the 1EZ170D5E3/TR12, it will have a forward current of 70mA.

The 1EZ170D5E3/TR12 also comes with a Package Cut Out feature. This allows for easy removal of the device from the board after performing repair or modification. It can also be used as an easy way to test the device. The leadless design of the package eliminates the need for trays and packages, making it easier to work with.

The 1EZ170D5E3/TR12 Zener diode is a very versatile device with a wide range of general purpose applications. Its low zener voltage design and efficient power consumption make it an ideal choice for cost-sensitive designs. In addition, its package cut out feature makes it easier to modify or repair wherever necessary.

The specific data is subject to PDF, and the above content is for reference

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