1EZ200D10E3/TR8

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are semiconductors that are mainly used for the purpose of controlling or stopping the flow of current inside an electrical circuit. A Zener diode is a special type of diode that is designed to use the reverse breakdown voltage of a p-n junction for regulating or stabilizing the electrical power in an electrical circuit. The 1EZ200D10E3/TR8 is a new, high-quality Zener diode from the manufacturer TR8, which is ideal for applications that require low power levels.

The main purpose for which the 1EZ200D10E3/TR8 is designed is for providing an improved control of electrical power in an electrical circuit. It has a maximum power dissipation of 200mW and a voltage rating of 10V. The product is rated for an operating temperature range of -65ºC to +125ºC and can handle a wide range of application voltages ranging from 0.5V to 20V. The maximum reverse leakage current is limited to 5μA and the maximum avalanche current is limited to 40mA.

In addition to its improved power control capabilities, the 1EZ200D10E3/TR8 is also highly reliable and provides superior performance in low and medium power levels. Its low leakage current provides long term reliability for any application. Its thermal resistance and positive temperature coefficient also help to reduce the impact of temperature on the device\'s performance.

The 1EZ200D10E3/TR8 is suitable for a variety of applications in various industries, such as automotive, industrial and medical. It can be used in circuits that require improved power control, regulation, and ESD (electrostatic discharge) protection. It can also be used in circuits that require stable and precise voltage reference to ensure the accuracy of analog-to-digital conversion and other sensitive operations.

The working principle for the 1EZ200D10E3/TR8 is to create a voltage barrier or resistance at the p-n junction. The diode is placed in reverse bias, which forces the current to flow from the anode to the cathode instead of from the cathode to the anode, as is the case in regular p-n junctions. The voltage barrier created at the junction is dependent on the applied voltage and the temperature of the surroundings. As the voltage is increased, the current will increase until it reaches the breakdown voltage, which is 10V for the 1EZ200D10E3/TR8. At that point, the current will be limited to the maximum current rating of the product.

The 1EZ200D10E3/TR8 Zener diode is an ideal solution for providing improved power control and regulation in electrically sensitive devices and circuits. Its low power dissipation rating and wide operating voltage range make it suitable for a wide variety of applications, including automotive, industrial, and medical. Its reliable performance in low and medium power levels make it a preferred choice for high-performance devices. Its reverse breakdown voltage also helps to ensure a high level of accuracy in analog-to-digital conversions and other sensitive operations.

The specific data is subject to PDF, and the above content is for reference