1EZ200D2/TR8

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The 1EZ200D2/TR8 is a single Zener diode. It is a semiconductor device, typically made from a combination of silicon and other materials, that can both conduct and block electrical current. Zener diodes are commonly used to regulate the flow of electrical current in a circuit and maintain a steady voltage.

The 1EZ200D2/TR8 has a breakdown voltage of 200 V and a reverse power dissipation of 500 mW at 1 mA, making it suitable for a variety of applications. It is often used for voltage regulation, voltage limiting, and as a negative temperature coefficient device. It can also be used for RF detection, signal rectification, and temperature compensation.

The working principle of the 1EZ200D2/TR8 is based on the P-N Junction. When a voltage is applied across a P-N junction, an electric field is created. If the voltage reaches a certain critical value called the breakdown or Zener voltage, the field becomes strong enough to cause electrons to cross the junction from the N-side to the P-side.

This causes a sharp increase in current which can flow both ways - from the P to the N-side and vice-versa. The voltage is thus kept at the breakdown value and the current flow is clamped between a lower and an upper limit. This regulation of voltage is called clamping action and is the basis of the 1EZ200D2/TR8’s operation.

The 1EZ200D2/TR8 is an ideal solution for applications that require a regulated voltage, such as power supplies and instrumentation. It is also suitable for protected circuits, temperature compensation, and data transmission or recording applications.

In summary, the 1EZ200D2/TR8 is a single Zener diode with a breakdown voltage of 200 V and a reverse power dissipation of 500 mW at 1 mA. It works on the P-N junction principle and is used for voltage control and other various applications.

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