1EZ200D2E3/TR12

1EZ200D2E3/TR12 is a Single Zener Diode with semiconductor wafers which are produced with a very thin layer of a specific type of semiconductor material, normally germanium or silicon, on top of a substrate made from a low-cost material such as glass or quartz. It uses a forward voltage applied across the two terminals, instead of a reverse bias, to break down (zener) the junction formed by the oxide layer.

Application Field of 1EZ200D2E3/TR12

1EZ200D2E3/TR12 is chiefly utilized to stabilize the voltages or as a form of voltage-regulators. It guarantees that the output voltage be kept constant no matter what changes in the input voltage and prevents the application from over voltage and short circuiting. Thus, it greatly reduces the risk of damage of electrical equipments and circuits from overvoltage.

Besides, 1EZ200D2E3/TR12 is also used on overvoltage detectors, clipping circuits, polarity protection apparatus and other power circuit control, etc. Moreover, it can be used with the related load control technologies, like thyristors, switching power supply and vccs application, etc.

Working Principle of 1EZ200D2E3/TR12

When reverse bias voltage is applied to 1EZ200D2E3/TR12, it generates a thin layer of depletion region between the two connected layers of p and n-type silicon, making it be unable to conduct a current. As the reverse voltage continues to increase, the electric field intensity in the depletion layer exceeds a predetermined value, initiating the avalanche breakdown. Meanwhile, a current (as known as the zener current) is generated at the same time and flows out from the depletion region to the connected electrode.

As it is a constant voltage element, when a reverse voltage is applied to it, the Zener current has a certain predictable range that is sustained against variations of voltage and temperature. Furthermore, it is neither affected by the change of input voltage current, or the load current.

Conclusion

To sum up, 1EZ200D2E3/TR12 is mainly used as stabilizing potential and protecting circuit, which provides a stable and reliable way to protect equipments and circuits from overvoltage or short-circuiting. The working principle of 1EZ200D2E3/TR12 is based on the specific breakdown mechanism of the depletion layer and its characteristic is dependable in handling large input voltage and current.