
Allicdata Part #: | 1N1200BR-ND |
Manufacturer Part#: |
1N1200BR |
Price: | $ 21.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | STANDARD RECTIFIER |
More Detail: | Diode |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 19.22070 |
Specifications
Series: | * |
Part Status: | Active |
Description
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Introduction
1N1200BR is a single-phase controllable silicon rectifier, which combines partial conduction and fast recovery in one device. It is used for uni-directional current and voltage control in power service applications, such as motor control, adjustable speed drives, power factor correction and harmonic cosine control, and in solar photovoltaic systems.Application Fields
1N1200BR guarantees low conduction losses in applications that demand partial conduction. The characteristic curve is optimized for low efficiency and fast recovery, ensuring a smooth current flow in applications that require variable currents. 1N1200BR\'s main applications include:- Motor drives
- DC/AC inverters
- Harmonic filters
- Switching power supplies
- Uninterruptible power supplies (UPS)
- AC-DC converters
- Audio power amplifiers
- TV tuner circuits
- Photovoltaic systems
- Power factor correction
- Solar PV systems
- Voltage regulation
- Transformerless inverters
Detailed Working Principles
1N1200BR rectifiers are based on the principle of partial conduction. In a traditional silicon rectifier, current flows through the entire path of the diode when conducting. However, when the rectifier is operating in its partial conduction state, just a small portion of the diode is conducting, while the rest of the diode is in a blocking state. This partial conduction allows the rectifier to switch quickly between conducting and non-conducting states in order to regulate current and voltage.The mechanism behind 1N1200BR\'s partial conduction is based on the diffusion of minority carriers within the junction region of the diode. During conduction, the majority carriers (electrons) can diffuse into the junction region, causing the current to pass solely through the junction region and not through the entire diode. This diffusion is enabled by an electric field, which is generated by the potential difference between the anode and the cathode. This potential difference is generated by the applied voltage, allowing the diode to enter the partial conduction state. The amount of current that flows through the diode when it is in its partial conduction state is a result of the electric field strength. By controlling the applied voltage, the electric field strength can be adjusted, allowing for precise control of the current flow. As a result, 1N1200BR rectifiers can control current in a wide range of applications, offering superior power quality and efficiency.Conclusion
1N1200BR is a single-phase controllable silicon rectifier which combines partial conduction and fast recovery in one device, making it an ideal solution for a wide range of power applications. It offers superior power quality, efficiency, and precise control of current flow, making it an indispensable component in a variety of power systems.The specific data is subject to PDF, and the above content is for reference
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