Allicdata Part #: | 1242-1012-ND |
Manufacturer Part#: |
1N1206AR |
Price: | $ 2.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 600V 12A DO4 |
More Detail: | Diode Standard, Reverse Polarity 600V 12A Chassis,... |
DataSheet: | 1N1206AR Datasheet/PDF |
Quantity: | 59 |
1 +: | $ 2.68380 |
10 +: | $ 2.39526 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 12A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-4 |
Operating Temperature - Junction: | -65°C ~ 200°C |
Base Part Number: | 1N1206AR |
Description
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The 1N1206AR is a single rectifier diode designed for use in a variety of electronic applications. It is a low-voltage, high-current device that is used in many kinds of commercial, industrial, and consumer electronics. The 1N1206AR is a popular and widely used device because of its relatively low cost and high performance.The 1N1206AR has a variety of applications in electronics. It can be used as a switch or rectifier in digital logic circuits, as a protection diode for input/output circuits, and for fiber-optic communications. It can also be used for power regulation, as a limiting diode in AC circuits, and for ESD protection in electronic systems.The working principle of the 1N1206AR is simple. When the voltage across the diode is positive, current flows from the anode side to the cathode side, and the diode acts as an open circuit to prevent current from flowing in the reverse direction. When the voltage across the diode is negative, the diode acts as a closed circuit, allowing current to flow in the reverse direction. The 1N1206AR has a low forward voltage drop and can handle high surge inrush currents.The 1N1206AR is constructed of a heavily doped semiconductor material, typically silicon, and consists of five regions. The two outer regions are the anode (+) and cathode (-) and are connected to the diode’s leads. The three inner regions are the drift region, the barrier layer, and the high-resistivity region. The barrier layer is a thin layer of material between the anode and cathode that prevents current flow in the reverse direction. The drift region carries the current in the forward direction, and the high-resistivity region provides additional insulation.The 1N1206AR is available in a variety of packages, including through-hole, surface-mount, and plastic encapsulated versions. The through-hole version is the most popular, as it is easy to install in a printed circuit board. The surface-mount version is more compact, and it is suitable for use on high-density boards such as those in mobile phones. The plastic encapsulated version is designed for applications in which the environment must be sealed from dust, moisture, and vibration.In summary, the 1N1206AR is a single rectifier diode that is used in a variety of applications, including digital logic circuits, power regulation, and fiber-optic communications. Its working principle is based on the principle of allowing current to flow in only one direction. It is available in a variety of packages, including through-hole, surface-mount, and plastic encapsulated versions. The 1N1206AR is a low-cost, high-performance device that is widely used in consumer, industrial, and commercial electronics.The specific data is subject to PDF, and the above content is for reference
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VS-1N1203RA | Vishay Semic... | 2.15 $ | 1000 | DIODE GEN PURP 300V 12A D... |
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1N1206A | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP 600V 12A D... |
1N1202A | GeneSiC Semi... | 3.56 $ | 1000 | DIODE GEN PURP 200V 12A D... |
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