1N3311RA Allicdata Electronics
Allicdata Part #:

1N3311RA-ND

Manufacturer Part#:

1N3311RA

Price: $ 23.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 12V 50W DO5
More Detail: Zener Diode 12V 50W ±10% Chassis, Stud Mount DO-5
DataSheet: 1N3311RA datasheet1N3311RA Datasheet/PDF
Quantity: 1000
100 +: $ 20.86150
Stock 1000Can Ship Immediately
$ 23.18
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±10%
Power - Max: 50W
Impedance (Max) (Zzt): 1 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
Operating Temperature: -65°C ~ 175°C
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Base Part Number: 1N3311
Description

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1N3311RA is a 500mW Zener diode that can be used in various electronic applications. It comes in a leadless package and offers excellent stability and high power dissipation characteristics. The diode has a wide operating temperature range and is available in multiple breakdown voltages for providing reliable, low-saturation solutions. This article will focus on the application field and working principle of the 1N3311RA.

The 1N3311RA Zener diode is a widely used device for protecting semiconductor devices by providing protection against reverse breakdown caused by overvoltage. It can be used in various applications such as power supplies, voltage regulation circuits and AC/DC converters. The diode has low leakage current and high energy gain which makes it suitable for power supply design.

The working principle of the 1N3311RA is based on the properties of reverse breakdown voltage. When the diode is subjected to a reverse bias, the depletion region of the junction between the p-type and n-type semiconductor becomes larger. When the voltage reaches a certain level, the electric current will start to flow and the reverse breakdown voltage will be reached. When the voltage is below the Zener voltage, the current is limited to the breakdown current which is typically very low. This property of the diode allows it to protect sensitive semiconductor components from destruction by overvoltage.

In addition to voltage regulation, the 1N3311RA can also be used in over-current protection circuits, ESD or Electro-Static Discharge protection circuits, surge protection circuits and clamping applications. The diode offers a low-cost, reliable and simple solution for various digital and analog systems.

In conclusion, the 1N3311RA is a 500mW Zener diode which is suitable for a variety of electronic applications. The diode offers excellent stability and high power dissipation characteristics. The working principle of the 1N3311RA is based on the reverse breakdown voltage property which allows it to limit the current when the voltage is below the Zener voltage. The diode can be used for voltage regulation, over-current protection, ESD protection, surge protection and clamping applications.

The specific data is subject to PDF, and the above content is for reference

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