Allicdata Part #: | 1N4001-N-0-2-BPMS-ND |
Manufacturer Part#: |
1N4001-N-0-2-BP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 50V 1A DO41 |
More Detail: | Diode Standard 50V 1A (DC) Through Hole DO-41 |
DataSheet: | 1N4001-N-0-2-BP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -- |
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Diodes are crucial components in many circuits and they come in many shapes and sizes. The 1N4001-N-0-2-BP is a single-phase, low-power rectifier diode with an average forward current of 1A and a peak inverse voltage of 200V. It is used in applications such as power supply regulation, overvoltage protection, and AC/DC conversion.
The 1N4001-N-0-2-BP relies on the basic diode structure to perform its duties. It is made up of two alternate semiconductor layers: an \'N\' type layer and a \'P\' type layer. When a larger \'N\' type layer is near an opposite \'P\' type layer, holes are created in the \'P\' layer, allowing electrons from the \'N\' layer to pass through.When an external diode is connected, the positive terminal will be attached to the \'N\' layer and the negative terminal will be attached to the \'P\' layer. When a voltage is applied to the diode, the electrons will flow freely from the \'N\' layer to the \'P\' layer and the diode will be in a forward-biased mode. This allows current to flow freely in one direction, which in turn powers the circuit.
In contrast, when reverse-biased voltage is applied to the diode, the electrons are blocked from flowing across the junction and thus no current flows through the diode. This reversed state can be used to limit the voltage that passes through the diode, protecting other components from excessive current.
The \'BP\' in the 1N4001-N-0-2-BP stands for Bi-Polar Power Supply, indicating that the device can be used with either AC or DC voltage. This means it can be used in both AC and DC circuits, making it a versatile component.
The 1N4001-N-0-2-BP is a great choice for applications that require low-power rectification and high forward current. It is a reliable and cost-effective solution and can handle up to 200V of peak inverse voltage, making it ideal for a variety of electronic applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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