1N4006GPE-M3/54 Allicdata Electronics
Allicdata Part #:

1N4006GPE-M3/54-ND

Manufacturer Part#:

1N4006GPE-M3/54

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURPOSE DO-204AL
More Detail: Diode
DataSheet: 1N4006GPE-M3/54 datasheet1N4006GPE-M3/54 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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The 1N4006GPE-M3/54 is a single general-purpose high-efficiency rectifier diode, available in the axial package. The diode is a type of electronic component with two electrodes, called anode and cathode, which behave like a one-way electrical valve for current. When the diode is forward biased, it allows current to flow through the anode and cathode terminals, while blocking the reverse current flow, allowing it to be used as a rectifier or clipper of the electrical signal. It is widely used in the international electronics industry.

The main application for the 1N4006GPE-M3/54 diode is for rectifying direct current and detecting alternating current, appropriately known as DC rectification and AC detection. The rectification occurs when the anode and cathode of the diode is forward-biased, where current can flow from the anode to the cathode, while the AC detection occurs when the anode and cathode are reverse biased, allowing only high-frequency AC signals to pass through. In addition, the diode is also used as a dynamic switch, and due to its low forward voltage drop, it can be used as a voltage regulator or shunt diode.

The basic working principle of the 1N4006GPE-M3/54 diode is the ‘P-N junction’, which describes the way the semiconductor material of the diode is configured. The semiconductor material is constructed from two ‘layers’ of material, each with different dopant concentrations and different material properties. One side is negatively charged, called the N-type, and the other side is positively charged, called the P-type, in what is known as the ‘P-N junction’. When the P-N junction is forward-biased, with a positive voltage at the anode and a negative voltage at the cathode, the P-N junction allows for a current to flow from the anode to the cathode. However, if the diode is reverse-biased, with a negative voltage at the anode and a positive voltage at the cathode, the P-N junction blocks current flow, which is known as reverse breakdown voltage.

The main specification of the 1N4006GPE-M3/54 diode is its maximum breakdown current, which is a measure of the maximum amount of current it can contain before it fails or breaks down. The specifications of the 1N4006GPE-M3/54 is an average maximum reverse current of 6A, with a peak reverse voltage of 400V and a maximum forward current of 3A.

The 1N4006GPE-M3/54 diode has many applications across a variety of industries, such as rectifying direct current and detecting alternating current. It is used in the power management industry, in appliance motors, and in medical electronics. It can also be used as a voltage regulator or a dynamic switch. The 1N4006GPE-M3/54 is a single general-purpose high-efficiency rectifier diode and is widely used throughout the international electronics industry.

The specific data is subject to PDF, and the above content is for reference

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