Allicdata Part #: | 1N4006-N-0-1-BPMS-ND |
Manufacturer Part#: |
1N4006-N-0-1-BP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 800V 1A DO-41 |
More Detail: | Diode Standard 800V 1A (DC) Through Hole DO-41 |
DataSheet: | 1N4006-N-0-1-BP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are a type of electronic device whose primary purpose is to allow electric current to pass in one direction while blocking the opposite direction. As such, they are commonly used in electric circuits as the simplest way to regulate electric current: a low voltage applied to a diode will cause the diode to pass current, while a high voltage will block current. Among the most widely used diodes are the single-phase rectifier diodes, which are widely used in a variety of electronic and electrical applications. One such widely used diode is the 1N4006-N-0-1-BP.
The 1N4006-N-0-1-BP is a single-phase, unidirectional diode designed for low voltage, general purpose applications. It features low forward voltage (VF) and high forward current (IF). The 1N4006-N-0-1-BP is commonly used in power supplies and as a rectifier in power-supply circuits. It also has wide application in energy-healing devices, medical equipment, and various other applications.
The 1N4006-N-0-1-BP is a simple and cost-effective solution for applications that require a reliable, discreet circuit. The diode utilizes a metal alloy junction, placed between an anode (positive) and cathode (negative) in order to allow electrical current to pass through while blocking the opposite direction. The metal alloy junction is responsible for creating an electron–hole barrier between the two terminals, which is responsible for creating a diode\'s directional dependence.
The 1N4006-N-0-1-BP is a highly reliable, rugged and versatile diode. It has a high peak reverse voltage (VRRM), which ensures the highest levels of safety in applications that require surge or transient protection. Furthermore, it is a cost-effective solution for applications that require higher forward current rating than other diodes of the same type. The 1N4006-N-0-1-BP also offers superior ESD durability, over-pressure protection, and temperature stability.
The 1N4006-N-0-1-BP is a versatile, cost-effective, and reliable single-phase, unidirectional diode suitable for a wide range of applications. It features a high current rating, high peak reverse voltage, over-pressure protection, and excellent ESD durability. Thanks to its robust design and construction, the 1N4006-N-0-1-BP is an ideal choice for use in power supplies, energy-healing devices, and a variety of other applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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