Allicdata Part #: | 1N4002RLGOSTR-ND |
Manufacturer Part#: |
1N4002RLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 1A DO41 |
More Detail: | Diode Standard 100V 1A Through Hole DO-41 |
DataSheet: | 1N4002RLG Datasheet/PDF |
Quantity: | 50000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N4002 |
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1N4002RLG application field and working principle
The 1N4002RLG is a single-phase rectifying diode designed primarily for general purpose rectifying and low-frequency switching applications. It is also suitable for use as a freewheeling or clamping device. The device is widely used in a variety of industrial and commercial applications, including rectifying power supplies, switching power supplies, relay circuits, lighting, and automotive and home appliance applications.
The 1N4002RLG diode consists of a semi-insulating single-crystal silicon body, containing two P-N junction regions. The junction formed by the two regions can be forward-biased or reverse-biased. When reverse biased, the junction is blocked and no current can pass through. When forward biased, the junction has a low resistance and allows current to flow.
The 1N4002RLG diode is able to rectify an AC signal by allowing current to flow in one direction through the device, blocking the current in the other direction. The diode is capable of blocking voltages up to 800V and forwarding current up to 1A. It also has an integrated protection diode to protect against reverse voltage and has a high-power rating due to its low forward voltage drop. The diode also has a high frequency switching capability.
In addition, the 1N4002RLG is equipped with an Intersil top-side construction, making it highly reliable and providing excellent thermal conductivity. This construction also helps reduce reverse recovery and increase solderability. The diode also meets the requirements of the RoHS directive, ensuring that it is free from harmful substances and can be safely used in the production of electrical and electronic equipment.
The 1N4002RLG is a low-cost, reliable and efficient single-phase rectifying diode used in a variety of rectifying and switching applications. It is capable of withstanding high voltages, has a low forward voltage drop, is highly reliable and meets the requirements of the RoHS directive. The device also has the added protection of an integrated protection diode to guard against reverse voltages.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4003G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4001GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4005GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4099 | Microsemi Co... | 1.7 $ | 1000 | ZENER DIODEZener Diode |
1N4099UR | Microsemi Co... | 2.58 $ | 1000 | DIODE ZENER 6.8V 500MW DO... |
1N4099UR-1 | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
1N4001GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4002GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4003GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4004GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4007GPE-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4001GPE-E3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4002GPE-E3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4004GPE-E3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005GPE-E3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4007GPE-E3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4001GPE-E3/91 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4007GP-E3/53 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4002GPE-E3/91 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4004GPE-E3/91 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4004GPE-E3/93 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4007GPE-E3/91 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4003GPE-E3/53 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4005GPE-E3/53 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4007GPE-E3/53 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4099 TR | Central Semi... | 0.15 $ | 1000 | DIODE ZENER 6.8V 250MW DO... |
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